E-beam Litho recipe

ZEP 520A positive resist

ZEP 520A positive resist

• 1)spin HMDS 5000 rpm 30sec
• 2)spin ZEP 520A 5000rmp 30sec (~300nm)
• 3)softbake 180C 5min
• 4)Exposure dosage: 450 uC/cm2
• 5)Develpment:

 MIBK:Iso=1:1 , 60sec
 MIBK:Iso=9:1 , 20sec

• 6)Si etch in DRIE chamber

  recipe:MITB_01
  C4F8/SF6/Ar=56/24/20sccm
  ICP/CCP power=850W/18W
  Pressure= 19mT
  Temperature:10C/40C
  Etch rate: ZEP: 37nm/min
             Silicon: 100nm/min