Wafer Table (old)

SOI wafer table

Wafer ID	Substrate(um)	BOX(um)	Device layer (um)	Doped Si	Undoped Si	# bought	# remaining	Supplier	Note	User/# needed
1M22349.1	799	1	1.5	B	P	10	9.5	SOITEC	8" diameter
1I29437.1	675	1	0.7	0.2um 1E14 B	0.5um 1E10	21	10	SOITEC+LSRL
1I29437.1	675	1	0.4	0.2um 1E14 B	0.2um 1E10	4	0	SOITEC+LSRL
1H74447.1	675	1	0.7	0.3um 1E14 p type	0.4um 1E10	10	2+1/3+1/3	SOITEC
1H74447.1	675	1	0.6	0.3um 1E14 p type	0.3um 1E10	5	3	SOITEC
1H74447.1	675	1	0.55	0.3um 1E14 p type	0.25um 1E10	10	3	SOITEC
1G47090.1	675	1	1	0.3um 1E14 p type	0.7um 1E10	10	2	SOITEC
	675	3	1	0.25um 1E14 p type	0.75um 1E10	10	7+1/2+1/2	SOITEC

SOI patterned wafer table

Wafer ID	Substrate(um)	BOX(um)	Device layer (um)	Details of device layer	Rib Etch (um)	# bought	# remaining	Supplier	Note
H4JYY8G		1	0.7	Undoped Si	0.3	1	1/4	umonyx/Intel	LASOR/PhASER
H4JYY8G		1	0.7	Undoped Si	0.4	1	1	umonyx/Intel	LASOR/PhASER
H4JYY8G		1	0.7	Undoped Si	0.3	1	1	umonyx/Intel	LASOR/PhASER, oxidation smooth

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III/V wafer table

Wafer ID	PL(nm)	Data and spec-sheet	# bought	# remaining	Supplier	Note
GLDA0908271-C	1545		5	1?	LandMark	LASOR/PhASER 200nm SCH with center QW
PULSAR1	~1030		2.75 3"	1.5 3"	LandMark	PULSAR;
PULSAR2	~1030		2 3"	1.5 3"	LandMark	PULSAR;

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Silicon wafer table

Wafer ID	Diameter (inches)	Thickness (um)	Orientation	Dopant Species	Resistivity (ohm-cm)	# bought	# remaining	Supplier	Note
n/a	4	500	100	As	0.001 - 0.005	25	25	University Wafer	CEEM - Si Nanowires
n/a	3	380	111	Sb	0.019 - 0.025	20	20	University Wafer	CEEM - Si Nanowires