Difference between revisions of "Si/Ge PD"
From OptoelectronicsWiki
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Revision as of 12:31, 18 January 2012
Contents
Overview
Gen 1: surface-normal PD
Design
Fabrication
Results
Gen 2: waveguide PD
Design
Fabrication
Fabrication for the waveguide design is composed of two parts: pre-growth Si processing and post-growth processing. The pre-growth processing included n-implant and annealing steps. Since this had not been done by our group before, I did a brief experiment to ensure that the final doping would match the designed doping. A description of the experiment is below.
The full process flow is here: File:WGPD fullprocess.pptx
General fabrication process development
Vertical Ge etching
ICP etches using Cl, CF4, and SF6 chemistries: File:Vertical Ge etching.pptx
N-implant verification
Phosphorous implant in Silicon: File:N-implant verification.pptx
