Difference between revisions of "Si/Ge PD"
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== Fabrication == | == Fabrication == | ||
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| + | Process flow: [[File:SiGePD_v2_proc_flow.pptx]] | ||
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| + | Process follower: [[File:SiGePD_v2_wcomments.xlsx]] | ||
== Results == | == Results == | ||
Revision as of 17:34, 18 January 2012
Contents
Overview
Gen 1: surface-normal PD
Design
Fabrication
Process flow: File:SiGePD v2 proc flow.pptx
Process follower: File:SiGePD v2 wcomments.xlsx
Results
Gen 2: waveguide PD
Design
Fabrication
Fabrication for the waveguide design is composed of two parts: pre-growth Si processing and post-growth processing. The pre-growth processing included n-implant and annealing steps. Since this had not been done by our group before, I did a brief experiment to ensure that the final doping would match the designed doping. A description of the experiment is below.
The full process flow is here: File:WGPD fullprocess.pptx
General fabrication process development
Vertical Ge etching
ICP etches using Cl, CF4, and SF6 chemistries: File:Vertical Ge etching.pptx
N-implant verification
Phosphorous implant in Silicon: File:N-implant verification.pptx
