Difference between revisions of "Process Hybrid Silicon Overview"
From OptoelectronicsWiki
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| P-/Probepad metal deposition || || [[Media:Probepad p-metal dep.docx | Probepad metallization]] || P-/probepad metal stack (Pd/Ti/Pd/Au) | | P-/Probepad metal deposition || || [[Media:Probepad p-metal dep.docx | Probepad metallization]] || P-/probepad metal stack (Pd/Ti/Pd/Au) | ||
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Revision as of 14:43, 12 October 2012
Summary
| Process ID | Process flow | Process follower | Description |
|---|---|---|---|
| WG etch | Complete Flow A | Si WG etch | Rib waveguide formation, Alignment marks. |
| VC etch | Si VC etch | Vertical channel etch | |
| Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
| InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
| QW wet etch | QW etch | Active layer wet etch | |
| N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
| Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
| P-/Probepad metal deposition | Probepad metallization | P-/probepad metal stack (Pd/Ti/Pd/Au) |
