Difference between revisions of "EPHI"

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(Created page with "== Overview == EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-no...")
 
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== Processing ==
 
== Processing ==
  
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'''Dev2 (Hybrid Silicon only for SOA tests)'''<br>
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<b>EPHI Shuttle run-1 (SOA only)</b>
  
 +
[[media:Process follower.docx | Complete Process Follower]]
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{| border="3"
 +
|+ '''Modules for Process A - Lead Process'''
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|- style="background:red; color:white"
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! Process ID !! Process flow !! Process follower !! Description
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|-
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| WG etch || [[media:Dev-2.2_process_flows.pptx‎ | Complete Flow A‎]] || [[media:WG Module.docx | Si WG etch‎]] || Rib waveguide formation, Alignment marks.
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|-
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| VC etch || &nbsp; || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch
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|-
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| Bonding || &nbsp; || [[Media:Bonding short.docx‎ | Bonding]] || [[Media:Bonding process.docx‎ | Plasma assisted wafer bonding guide - Author:Michael D]]
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|-
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| InP-mesa etch || &nbsp; || [[Media:RIE2 etch.docx‎ | P-mesa etch]] || Mesa etch to top SCH layer
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|-
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| QW wet etch || &nbsp; || [[Media:QW wet etch.docx‎ | QW etch]] || Active layer wet etch
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|-
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| N-metal deposition || &nbsp; || [[Media:n metal dep.docx‎ | N-metal deposition]] || N-metal (Ni/Ge/Au/Ni/Au)
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|-
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| Oxide Planarization & Via formation || &nbsp; || [[Media:planarize and via etch.docx‎ | Planarization & Via etch]] || 1um oxide deposition & via etch
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|-
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| P-/Probepad metal deposition  || &nbsp; || [[Media:Probepad p-metal dep.docx‎ | Probepad metallization]] || P-/probepad metal stack (Pd/Ti/Pd/Au)
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|-
  
−
'''RUN 3.1 (active Silicon only for fast phase modulator tests)'''<br>
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|}
−
[[Media:SWEEPER_3.1_Gratings.zip]]
+
[[media:Process follower.docx | Complete Process Follower]]
−
 
+
{| border="3"
 +
|+ '''Modules for Process B- Catch-up Process'''
 +
|- style="background:red; color:white"
 +
! Process ID !! Process flow !! Process follower !! Description
 +
|-
 +
| WG etch || [[media:Dev-2.2_process_flows.pptx‎ | Complete Flow‎ B]] || [[media:WG Module.docx | Si WG etch‎]] || Rib waveguide formation, Alignment marks.
 +
|-
 +
| VC etch || &nbsp; || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch
 +
|-
 +
| Bonding || &nbsp; || [[Media:Bonding short.docx‎ | Bonding]] || [[Media:Bonding process.docx‎ | Plasma assisted wafer bonding guide - Author:Michael D]]
 +
|-
 +
| P-metal deposition  || &nbsp; || [[media:p metal deposition.docx | p-metal deposition]] || P-metal stack (Pd/W)
 +
|-
 +
| InP-mesa etch || &nbsp; || [[Media:RIE2 etch.docx‎ | P-mesa etch]] || Mesa etch to top SCH layer
 +
|-
 +
| QW wet etch || &nbsp; || [[Media:QW wet etch.docx‎ | QW etch]] || Active layer wet etch
 +
|-
 +
| N-metal deposition || &nbsp; || [[Media:n metal dep.docx‎ | N-metal deposition]] || N-metal (Ni/Ge/Au/Ni/Au)
 +
|-
 +
| Oxide Planarization & Via formation || &nbsp; || [[Media:planarize and via etch.docx‎ | Planarization & Via etch]] || 1um oxide deposition & via etch
 +
|-
 +
| Probepad metal deposition  || &nbsp; || [[Media:Probepad p-metal dep.docx‎ | Probepad metallization]] || Probepad metal stack (Pd/Ti/Pd/Au)
 +
|-
 +
|}
  
  
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== Characterization ==
 
== Characterization ==
  
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<u><b>aSI PHASE MODULATOR RUN - Sweeper 3.1</b></u>  <br>
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...
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'''Run 1'''
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−
 
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Step -        Description        - Sample Names - File
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−
 
+
−
3.3  - Rib litho pics before hard mask etch:  [[File:rib litho pics.zip]]
+

Revision as of 09:23, 26 October 2012

Overview

EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.



Simulations

...



Processing

EPHI Shuttle run-1 (SOA only)

Complete Process Follower

Modules for Process A - Lead Process
Process ID Process flow Process follower Description
WG etch Complete Flow A‎ Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
P-/Probepad metal deposition   Probepad metallization P-/probepad metal stack (Pd/Ti/Pd/Au)

Complete Process Follower

Modules for Process B- Catch-up Process
Process ID Process flow Process follower Description
WG etch Complete Flow‎ B Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
P-metal deposition   p-metal deposition P-metal stack (Pd/W)
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
Probepad metal deposition   Probepad metallization Probepad metal stack (Pd/Ti/Pd/Au)



Characterization

...

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