Difference between revisions of "E-Beam Lithography (EBL)"

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(Proximity Correction)
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* [[media:Proximity Effect Correction for Electron Beam Lithography.ppt|Proximity Effect Correction Experiment]]  
 
* [[media:Proximity Effect Correction for Electron Beam Lithography.ppt|Proximity Effect Correction Experiment]]  
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login to BEAMER server:
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128.111.192.142
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u:bowers
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p:femto
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Run a monte carlo simulation of the "substrate" and resist you are using in MC^3.
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For example: ZEP(2k) on 500nm SOI with 1um BOx.
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1) Use the drop down tab to select PENELOPE.
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2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness.
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3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer
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Return to  [[Cleanroom_Equipment]]  
 
Return to  [[Cleanroom_Equipment]]  

Revision as of 11:57, 20 February 2013

Proximity Correction


login to BEAMER server:

128.111.192.142

u:bowers

p:femto


Run a monte carlo simulation of the "substrate" and resist you are using in MC^3.

For example: ZEP(2k) on 500nm SOI with 1um BOx.

1) Use the drop down tab to select PENELOPE.

2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness.

3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer


Return to  Cleanroom_Equipment