Difference between revisions of "Cleanroom Reports"

Revision as of 12:20, 2 April 2010

List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
Please update yours if you run any calibration so that everyone can keep track of them.

**Dry Etch**
Equipment	Etched material	Substrate	Recipe	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
ICP#2	Si	SOI	Bowers si etch # 127	~ 4nm/sec	APR 02, 2010	Hui-Wen	ICP#2 si etch rate

**Wet Etch**
Etched material	Solution	Mask	Latest etch rate	Latest update by	Note
Thermal oxide	BHF	PR or dielectric	~100nm/min
PECVD oxide	BHF	PR or dielectric	~225nm/min
PECVD SiN	HF		~500nm/min	Geza	PR does not survive as a mask

@@ Line 5: / Line 5: @@
 {| border="3"
 |+ '''Dry Etch'''
-|- style="background:red; color:white"
+|- style="background:green; color:white"
-! Equipment !! Etched material !!  Substrate !!Recipe !!Latest etch rate !! Latest update date !! Calib. file !! Note
+! Equipment !! Etched material !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note
 |-
-| ICP#2 || Si || SOI ||Bowers si etch # 127 ||~ 4nm/sec || APR 02, 2010 || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || &nbsp;
+| ICP#2 || Si || SOI ||Bowers si etch # 127 ||~ 4nm/sec || APR 02, 2010 || Hui-Wen || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || &nbsp;
+|-
+|}
+{| border="3"
+|+ '''Wet Etch'''
+|- style="background:purple; color:white"
+! Etched material !!  Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note
+|-
+| Thermal oxide || BHF ||PR or dielectric || ~100nm/min || &nbsp; || &nbsp; || &nbsp; || &nbsp;
+|-
+| PECVD oxide || BHF ||PR or dielectric || ~225nm/min || &nbsp; || &nbsp; || &nbsp; || &nbsp;
+|-
+| PECVD SiN || HF ||&nbsp; || ~500nm/min || &nbsp; || Geza || &nbsp; || PR does not survive as a mask
 |-
 |}