- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
- Wet etch recipes:
- http://www.cleanroom.byu.edu/wet_etch.phtml
- http://terpconnect.umd.edu/~browns/wetetch.html
- http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php
- http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/
- http://refractiveindex.info/
Dry Etch
| Etched material |
Equipment |
Substrate |
Recipe |
Latest etch rate |
Latest update date |
Latest update by |
Calib. file |
Note
|
| Si |
ICP#2 |
SOI |
Bowers si etch # 127 |
4nm/s |
JUN 12, 2010 |
Jon Peters |
ICP#2 si etch rate |
40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
|
| SiO2 |
ICP#2 |
SOI |
SiOxVert, recipe #101 |
~252nm/min |
NOV 9, 2010; |
Molly |
Media:SiO2_Vert.pdf |
40sccm CHF3, 900/200W ICP/RF, 0.5Pa
|
| SiN |
ICP#2 |
SOI |
SiOxVert, recipe #101 |
~300nm/min |
|
Geza |
|
40sccm CHF3, 900/200W ICP/RF, 0.5Pa
|
| SiN PE-CVD |
RIE#2 |
SOI |
MHA, 4/20/10 |
See note |
Sept 26, 2011; |
JonP |
|
Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2.
|
| Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
Bowers SiOxVert etch # 101 |
~111 nm/min |
MAY 27, 2010 |
Geza |
|
|
| PECVD#1 SiO2 |
ICP#2 |
|
nano etch # 104 |
~60nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa
|
| PECVD#1 SiO2 |
ICP#2 |
|
GC-SiN # 181 |
~80-100nm/min |
Nov 1, 2013 |
Jon P |
|
CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min
|
| SPR 220 3um |
ICP#2 |
|
GC-SiN # 181 |
~184nm/min |
Nov 1, 2013 |
Jon P |
|
CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um
|
| Si3N4 |
ICP#2 |
|
nano etch # 104 |
~140nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
| UV-6 |
ICP#2 |
|
nano etch # 104 |
~120nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
| SPR955-0.9CM |
ICP#2 |
|
nano etch # 104 |
??? |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
| DSK-101 |
ICP#2 |
|
nano etch # 104 |
~142nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
| Cr |
ICP#2 |
|
nano etch # 104 |
negligible |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
| ZEP or 2:1 ZEP:Anisol |
ICP#2 |
|
nano etch # 104 |
~142nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
| Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
aSi SF6 based etch # 156 (200W) |
~275 nm/min |
JUN 1, 2010 |
Geza |
|
|
| Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
aSi SF6 based etch # 156 (200W + 40 sccm O2) |
~465 nm/min |
JUN 1, 2010 |
Geza |
|
|
| Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
aSi SF6 based etch # 156 (300W + 40 sccm O2) |
~690 nm/min |
JUN 1, 2010 |
Geza |
|
Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
|
| Cured BCB (250 C for 60 min) |
ICP#1 |
SOI |
CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) |
~400 nm/min |
JUN 1, 2012 |
Jared H |
|
|
| SiO2 and Si |
ICP#2 |
Si |
SF6-O2 ICP2 #124 |
280-360nm/m |
JUN 08, 2012 |
Jon Peters |
media:20120608_SF6_Silicon_etch.pptx |
30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
|
| Sputtered W |
ICP#1/2 |
Si |
SF6-Ar, #197/#174 ICP#1/2) |
~70 nm/m |
NOV 02, 2012 |
Geza |
|
Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1
|
Wet Etch
| Etched material |
Solution |
Mask |
Latest etch rate |
Latest update date |
Latest update by |
Calib. file |
Note
|
| Thermal oxide |
BHF |
PR or dielectric |
~100nm/min |
|
|
|
|
| PECVD oxide |
BHF |
PR or dielectric |
~225nm/min |
|
|
|
|
| PECVD SiN |
BHF |
|
~30-50nm/min |
|
Jon P. |
|
|
| PECVD SiN |
HF |
|
~500nm/min |
|
Geza |
|
PR does not survive as a mask
|
| Cured SU8 (260 C for 30 min) |
Piranha (150mL H2SO4 + 50mL H2O2) |
|
~500nm/s (v. fast) |
MAY 27, 2010 |
Geza |
|
Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
|
| Titanium (sputtered) |
BHF |
PR |
~3.33nm/s (order of magnitude estimate) |
JULY 5, 2010 |
Geza |
|
If you etch for >5min, cure PR at 115C for 15min prior to etch
|
| Pd |
Au etchant (TFA) |
PR |
~1.8nm/s |
Oct 15, 2012 |
Geza |
|
PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
|
| Ta2O5 |
HF |
no mask used |
~100nm/s |
JUNE 1, 2011 |
Geza |
|
|
| Sputtered W |
H2O2 (20 C) |
no mask used |
~50 nm/min (~100 nm/min @ 50 C) |
Nov 1, 2012 |
Geza |
|
unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)
|
Dielectric Deposit
| Material |
Equipment |
Latest deposit rate |
Latest update date |
Latest update by |
Calib. file |
Note
|
| SiN |
PECVD |
|
|
|
|
|
| SiO2 |
PECVD |
|
|
|
|
|
| Ta2O5 |
Ebeam #2 |
1A/sec |
|
Hui-Wen |
|
Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
|
| SrF2 |
Ebeam #2 |
2-5A/sec |
|
Jon P |
|
Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.
|
Metal deposition
W deposition in Sputter 4 Report on film stress
Lithography
| Equipment |
Resist |
Polarity |
Hardmask |
Substrate |
Pre-Exposure Bake |
Exposure Dose |
Focus |
Post-Exposure Bake |
Development |
Report |
Author
|
| Autostepper |
SPR 955 0.9 |
Positive |
200nm PECVD Oxide |
GaAs (should work with Si, SOI, and InP also) |
95C,90s |
~.42s report variable |
0 |
110C,90s |
MIF726,40s |
Over-exposure Pattern Reduction |
Jock
|
Thermal oxidation
