Difference between revisions of "Cleanroom Reports"
From OptoelectronicsWiki
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| PECVD SiN || HF || || ~500nm/min || || Geza || || PR does not survive as a mask | | PECVD SiN || HF || || ~500nm/min || || Geza || || PR does not survive as a mask | ||
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| + | | PECVD SiN || || || || || || || | ||
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Revision as of 12:22, 2 April 2010
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
| Equipment | Etched material | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|---|
| ICP#2 | Si | SOI | Bowers si etch # 127 | ~ 4nm/sec | APR 02, 2010 | Hui-Wen | ICP#2 si etch rate |
| Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|
| Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
| PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
| PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
| PECVD SiN |
