Difference between revisions of "DesignRules"

Revision as of 14:42, 20 April 2010

Design Rules

WG

• 3 um trenches for 200 um S-bends keep bending losses minimal
• Put 50 um trench around Verniers and alignment markers

VC

• 10 um x 10 um, 50 um separation
• No VC around verniers, so verviers have a chance of being exposed after substrate removal

Mesa

• 14 um wide

QW

• 16 um wide

Thick p metal

• Same at N metal
• 4 um wide
• Keep 11 um separation between thick P and N metal.

N Metal

• 20 um wide

Implant

• 12 um wide
• Implant after anneal to ensure the quality

Via

• Min. 6 um opening
• Open up area that is uniform at bottom

Processing Rules

Always put a dummy/witness sample in the chamber when depositing metals and dielectrics.

• Samples can later be used for determining thicknesses.
• These samples can also be used if a given layer has to be etched on the real sample, but etch is not well characterized.