Difference between revisions of "Cleanroom Reports"

Revision as of 15:28, 28 April 2010

List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
Please update yours if you run any calibration so that everyone can keep track of them.

**Dry Etch**
Etched material	Equipment	Substrate	Recipe	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Si	ICP#2	SOI	Bowers si etch # 127	drop from 4nm/s to 3nm/s	APR 27, 2010	Hui-Wen	ICP#2 si etch rate

**Wet Etch**
Etched material	Solution	Mask	Latest etch rate	Latest update by	Note
Thermal oxide	BHF	PR or dielectric	~100nm/min
PECVD oxide	BHF	PR or dielectric	~225nm/min
PECVD SiN	BHF		~30-50nm/min	Jon P.
PECVD SiN	HF		~500nm/min	Geza	PR does not survive as a mask

@@ Line 8: / Line 8: @@
 ! Etched material !! Equipment !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note
 |-
-| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||~ 3nm/sec || APR 27, 2010 || Hui-Wen || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || &nbsp;
+| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||drop from 4nm/s to 3nm/s || APR 27, 2010 || Hui-Wen || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || &nbsp;
 |-
 |}