Difference between revisions of "Cleanroom Reports"

Revision as of 11:10, 23 June 2010

List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
Please update yours if you run any calibration so that everyone can keep track of them.
Wet etch recipes:

**Dry Etch**
Etched material	Equipment	Substrate	Recipe	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Si	ICP#2	SOI	Bowers si etch # 127	drop from 4nm/s to 3nm/s	APR 27, 2010	Jon Peters	ICP#2 si etch rate
Cured SU8 (260 C for 30 min)	ICP#2	SOI	Bowers SiOxVert etch # 101	~111 nm/min	MAY 27, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W)	~275 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W + 40 sccm O2)	~465 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (300W + 40 sccm O2)	~690 nm/min	JUN 1, 2010	Geza		Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.

**Wet Etch**
Etched material	Solution	Mask	Latest etch rate	Latest update date	Latest update by	Note
Thermal oxide	BHF	PR or dielectric	~100nm/min
PECVD oxide	BHF	PR or dielectric	~225nm/min
PECVD SiN	BHF		~30-50nm/min		Jon P.
PECVD SiN	HF		~500nm/min		Geza	PR does not survive as a mask
Cured SU8 (260 C for 30 min)	Piranha (150mL H2SO4 + 50mL H2O2)		~500nm/s (v. fast)	MAY 27, 2010	Geza	Piranha does not attack SiN or Gold, suspect heavy undercut but have no data

**Dielectric Deposit**
Material	Equipment	Latest deposit rate	Latest update by	Calib. file	Note
SiN	PECVD
SiO2	PECVD
Ta2O5	Ebeam #2	1A/sec	Hui-Wen	Script	Deposit 180nm on blank Si sample, measure index and thickness, calculate required thickness from index (use Excel script), deposit dielectric on both facets (one at a time). Generally 180nm, n~2.15, purple color.

@@ Line 11: / Line 11: @@
 ! Etched material !! Equipment !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note
 |-
-| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||drop from 4nm/s to 3nm/s || APR 27, 2010 || Hui-Wen || [[media:100402_ICP-2_si_etch_calibration.xls‎|ICP#2 si etch rate]] || &nbsp;
+| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||drop from 4nm/s to 3nm/s || APR 27, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls‎|ICP#2 si etch rate]] || &nbsp;
 |-
 | Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza ||  || &nbsp;