Difference between revisions of "Process Hybrid Silicon"
From OptoelectronicsWiki
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||Pattern and deposit probe metal | ||Pattern and deposit probe metal | ||
|- | |- | ||
| − | | Epump 2 || || || [[media:Epump2_Proton_Followerrev3.xls | Epump 2]] || | + | | Epump 2 || || || [[media:Epump2_Proton_Followerrev3.xls | Epump 2]] || Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. |
| + | |- | ||
| + | | Self-aligned rev. 2 || || || [[media:Self_aligned_process.rev_2.doc | self rev. 2]] || Self-aligned process, starts after substrate removal. Contains PR spin speeds and exposure times for Stepper (6300) | ||
|- | |- | ||
| Wafer bonding || || || [[Media:Wafer_Bonding_guide_by_Mike_rev_1.docx | Bonding]]|| Beginner's guide to plasma assisted wafer bonding | | Wafer bonding || || || [[Media:Wafer_Bonding_guide_by_Mike_rev_1.docx | Bonding]]|| Beginner's guide to plasma assisted wafer bonding | ||
Revision as of 15:29, 17 March 2011
| Process ID | Version | Process flow | Process follower | Description |
|---|---|---|---|---|
| SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
| SP-VC | Si VC etch | Vertical channel etch | ||
| HSP-METCH | Mesa etch | Forms mesa | ||
| HSP-QW | III-V QW etch | Quantum well etch | ||
| HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
| HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
| HSP-METAL | thin metal | Thin metal deposition | ||
| HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
| Epump 2 | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | ||
| Self-aligned rev. 2 | self rev. 2 | Self-aligned process, starts after substrate removal. Contains PR spin speeds and exposure times for Stepper (6300) | ||
| Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding |
