Difference between revisions of "Process Hybrid Silicon"

Revision as of 15:36, 17 March 2011

**Silicon process overview**
Process ID	Process flow	Process follower	Description
SP-PWD	Si WG etch‎	Si WG etch‎	Single etch-step SOI process; passive components
SP-VC		Si VC etch	Vertical channel etch
HSP-METCH		Mesa etch	Forms mesa
HSP-QW		III-V QW etch	Quantum well etch
HSP-NETCH		n-layer etch	Remove n-layer to expose Si
HSP-PTLM		p-TLM step	An additional process step is necessary to pattern p-TLM structures
HSP-METAL		thin metal	Thin metal deposition
HSP-PP		Probe pad deposition	Pattern and deposit probe metal
Epump 2	process flow	Epump 2	Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches.
Self-aligned rev. 2	process flow	self rev. 2	Self-aligned process, starts after substrate removal. Contains PR spin speeds and exposure times for Stepper (6300)
Wafer bonding		Bonding	Beginner's guide to plasma assisted wafer bonding
Wafer bonding II		direct wafer bonding	O2 plasma assisted wafer bonding (rev. 2008)
Non-planar wafer bonding			Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske)

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 |-
 | Wafer bonding || &nbsp; || &nbsp; || [[Media:Wafer_Bonding_guide_by_Mike_rev_1.docx‎ | Bonding]]|| Beginner's guide to plasma assisted wafer bonding
+|-
+| Wafer bonding II || &nbsp; || &nbsp; || [[media:O2PlamsaDirectBond_DiLiang.doc | direct wafer bonding]] || O2 plasma assisted wafer bonding (rev. 2008)
+|-
+| Non-planar wafer bonding || &nbsp; || &nbsp; || &nbsp; || Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske)
 |-
 |}