Difference between revisions of "Process Hybrid Silicon"

Revision as of 15:55, 17 March 2011

**Single steps of hybrid silicon processes**
Process ID	Process flow	Process follower	Description
SP-PWD	Si WG etch‎	Si WG etch‎	Single etch-step SOI process; passive components
SP-VC		Si VC etch	Vertical channel etch
HSP-METCH		Mesa etch	Forms mesa
HSP-QW		III-V QW etch	Quantum well etch
HSP-NETCH		n-layer etch	Remove n-layer to expose Si
HSP-PTLM		p-TLM step	An additional process step is necessary to pattern p-TLM structures
HSP-METAL		thin metal	Thin metal deposition
HSP-PP		Probe pad deposition	Pattern and deposit probe metal
Wafer bonding		Bonding	Beginner's guide to plasma assisted wafer bonding
Wafer bonding II		direct wafer bonding	O2 plasma assisted wafer bonding (rev. 2008)
Non-planar wafer bonding		non-planar bonding	Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske)
TLM only		TLM only	Post-bond process for use with a TLM-only mask set

**Full device run hybrid silicon processes**
Process ID	Version	Process flow	Process follower	Description
PHASER	2	PHASER	PHASER	PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates
Epump 2		process flow	Epump 2	Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches.
Self-aligned rev. 2		process flow	self rev. 2	Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300)

**Old versions of hybrid silicon processes**
Process ID	Version	Process flow	Process follower	Description
PHASER	2	PHASER	PHASER	PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates

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 {| border="3"
-|+ '''Single-step hybrid silicon processes'''
+|+ '''Single steps of hybrid silicon processes'''
 |- style="background:red; color:white"
 ! Process ID !! Version !! Process flow !! Process follower !! Description
@@ Line 45: / Line 45: @@
 | Self-aligned rev. 2 || &nbsp; || [[media:Self_Aligned_Process_Flow_awfang0308.ppt | process flow ]] || [[media:Self_aligned_process.rev_2.doc | self rev. 2]] || Self-aligned process, starts after substrate removal, revised 2007.  Contains PR spin speeds and exposure times for Stepper (6300)
 |-
+|}
+{| border="3"
+|+ '''Old versions of hybrid silicon processes'''
+|- style="background:red; color:white"
+! Process ID !! Version !! Process flow !! Process follower !! Description
+|-
+| PHASER || 2 || [[media:090810_filter_rev2_process flow.ppt | PHASER]] || [[media:090811_recipe_optical filter_rev2_batch1.xls | PHASER]] || PHASER (SOAs, thermal phase tuning pads, MMIs) process flow.  [[media:PHASERmaskCoordinates.xlsx|Alignment mark coordinates]]
+|-
 |}