Difference between revisions of "HSP priority list"
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=Agenda & Priority List= | =Agenda & Priority List= | ||
| + | |||
| + | |||
| + | Back to [[Process Hybrid Silicon]]. | ||
==Priority list== | ==Priority list== | ||
* Process development: | * Process development: | ||
** Etch-back module (Jock, Jared) | ** Etch-back module (Jock, Jared) | ||
| − | ** Need to | + | ** Need to converge on process follower (Excel?) -> start with Si etch / VC etch / bonding |
* III/V epi design | * III/V epi design | ||
** Finalize design | ** Finalize design | ||
| Line 11: | Line 14: | ||
* III/V SOA mask design (UCSB-E-Phi-dev-2 @ [[UCSB E-Phi Runs]]) | * III/V SOA mask design (UCSB-E-Phi-dev-2 @ [[UCSB E-Phi Runs]]) | ||
** Issue: Epi will arrive > 3 months -> test process follower with OPSIS run? | ** Issue: Epi will arrive > 3 months -> test process follower with OPSIS run? | ||
| − | + | * SOI passives run fabrication | |
==Issues brought up in meetings== | ==Issues brought up in meetings== | ||
| − | === | + | ===04/20/2012=== |
| + | [[DUV Stepper development]] | ||
| + | |||
| + | ===03/02/2012=== | ||
| + | *Sudha - Removal of organics(/polymer) after RIE#2 etch: Gasonics + 10sec HF etch + Gasonics. | ||
| + | |||
| + | *Bonding (Jon P.) - Could get some tips/demo from Aurrion: | ||
| + | **PR while cleaving | ||
| + | **Minimal handling | ||
| + | |||
| + | ===20/01/2012=== | ||
| + | * AR (Sudha): Process follower to Jon P. & Martijn (incl. wafer details: who, where, version. etc.) | ||
| + | * Epi order: 3 2" wafers per epi design, 2mm spacing between dies | ||
| + | ** The Epi of the standard landmark LD design with GRIN-SCH and 6 pairs of 5nm/9nm well/barrier has a low refractive index --> go to 7 pairs of 6nm/9nm well/barrier and revised GRIN-SCH for a higher refractive index. | ||
| + | |||
| + | ===13/01/2012=== | ||
| + | * Sudha/Yongbo.: should we undercut to define the current channel? | ||
| + | - (Martijn) high risk <br> | ||
| + | - REFERENCE EPI: centered QW, similar to past epi + top etch-stop layer + InGaAsP contact helper(?)<br> | ||
| + | - HIGH RISK EPI: e-block layers, GRINSCH | ||
| + | |||
| + | * Jon P.: Resist difficult to remove after Si-doping implants | ||
| + | - can remove with long strip, pirhana (hot) <br> | ||
| + | - long-term: move to thin SiO2 underlayer (implant through this) and remove with BHF | ||
| + | * Jared H.: edge bead (may not be an issue, esp. for 4" wafer processing - use stayout of 5-10mm) | ||
| + | - for small samples, can surround with additional chips during spin | ||
| + | |||
| + | ===06/01/2012=== | ||
* Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area? | * Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area? | ||
* Jock: Grating module works for etch depths < 120 nm | * Jock: Grating module works for etch depths < 120 nm | ||
* Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum | * Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum | ||
** First have nice gain spectrum before we discuss further | ** First have nice gain spectrum before we discuss further | ||
Latest revision as of 14:48, 20 April 2012
Contents
Agenda & Priority List[edit]
Back to Process Hybrid Silicon.
Priority list[edit]
- Process development:
- Etch-back module (Jock, Jared)
- Need to converge on process follower (Excel?) -> start with Si etch / VC etch / bonding
- III/V epi design
- Finalize design
- Order epi
- III/V SOA design
- III/V SOA mask design (UCSB-E-Phi-dev-2 @ UCSB E-Phi Runs)
- Issue: Epi will arrive > 3 months -> test process follower with OPSIS run?
- SOI passives run fabrication
Issues brought up in meetings[edit]
04/20/2012[edit]
03/02/2012[edit]
- Sudha - Removal of organics(/polymer) after RIE#2 etch: Gasonics + 10sec HF etch + Gasonics.
- Bonding (Jon P.) - Could get some tips/demo from Aurrion:
- PR while cleaving
- Minimal handling
20/01/2012[edit]
- AR (Sudha): Process follower to Jon P. & Martijn (incl. wafer details: who, where, version. etc.)
- Epi order: 3 2" wafers per epi design, 2mm spacing between dies
- The Epi of the standard landmark LD design with GRIN-SCH and 6 pairs of 5nm/9nm well/barrier has a low refractive index --> go to 7 pairs of 6nm/9nm well/barrier and revised GRIN-SCH for a higher refractive index.
13/01/2012[edit]
- Sudha/Yongbo.: should we undercut to define the current channel?
- (Martijn) high risk
- REFERENCE EPI: centered QW, similar to past epi + top etch-stop layer + InGaAsP contact helper(?)
- HIGH RISK EPI: e-block layers, GRINSCH
- Jon P.: Resist difficult to remove after Si-doping implants
- can remove with long strip, pirhana (hot)
- long-term: move to thin SiO2 underlayer (implant through this) and remove with BHF
- Jared H.: edge bead (may not be an issue, esp. for 4" wafer processing - use stayout of 5-10mm)
- for small samples, can surround with additional chips during spin
06/01/2012[edit]
- Jon P.: Resist nonuniformity for multiple-die exposure -> >= 1-cm stay-out area?
- Jock: Grating module works for etch depths < 120 nm
- Bandgap issue: PL peak is not equal to lasing wavelength, and lasing wavelength is not equal to SOA gain maximum
- First have nice gain spectrum before we discuss further
