Difference between revisions of "Mesa Etching"
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== Data == | == Data == | ||
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| + | E-Phi Dev2 SOA mesa definition process: | ||
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| + | [[media:Ephi_Mesa_Etching_v2.xlsx]] | ||
[[media:2011_Jun11_MesaSmooth.pptx|SEMs of mesa]] | [[media:2011_Jun11_MesaSmooth.pptx|SEMs of mesa]] | ||
As shown in the above SEMs, etching the SiN layer in ICP, results in smoother sidewalls after the InP etch (when compared to the standard process which uses RIE3). The next step is to compare the sidewalls of this optimized etch process to the InP etch from the Blumenthal and Coldren groups. | As shown in the above SEMs, etching the SiN layer in ICP, results in smoother sidewalls after the InP etch (when compared to the standard process which uses RIE3). The next step is to compare the sidewalls of this optimized etch process to the InP etch from the Blumenthal and Coldren groups. | ||
Revision as of 21:16, 12 July 2012
This page outlines our effort to improve the III-V mesa etch.
Processing
The mask file is identical to the mesa layer of the taper test mask.
Data
E-Phi Dev2 SOA mesa definition process:
media:Ephi_Mesa_Etching_v2.xlsx
As shown in the above SEMs, etching the SiN layer in ICP, results in smoother sidewalls after the InP etch (when compared to the standard process which uses RIE3). The next step is to compare the sidewalls of this optimized etch process to the InP etch from the Blumenthal and Coldren groups.
