Difference between revisions of "Cleanroom Reports"

Revision as of 14:31, 26 September 2011

List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
Please update yours if you run any calibration so that everyone can keep track of them.
Wet etch recipes:

**Dry Etch**
Etched material	Equipment	Substrate	Recipe	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Si	ICP#2	SOI	Bowers si etch # 127	4nm/s	JUN 12, 2010	Jon Peters	ICP#2 si etch rate	40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
SiO2	ICP#2	SOI	SiOxVert, recipe #101	~252nm/min	NOV 9, 2010;	Molly	Media:SiO2_Vert.pdf	40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN	ICP#2	SOI	SiOxVert, recipe #101	~300nm/min		Geza		40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN PE-CVD	RIE#2	SOI	MHA, 4/20/10	~7.4nm/min		JonP		Methane/H2/Ar, 500V, , 125mT
Cured SU8 (260 C for 30 min)	ICP#2	SOI	Bowers SiOxVert etch # 101	~111 nm/min	MAY 27, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W)	~275 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W + 40 sccm O2)	~465 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (300W + 40 sccm O2)	~690 nm/min	JUN 1, 2010	Geza		Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.

**Wet Etch**
Etched material	Solution	Mask	Latest etch rate	Latest update date	Latest update by	Note
Thermal oxide	BHF	PR or dielectric	~100nm/min
PECVD oxide	BHF	PR or dielectric	~225nm/min
PECVD SiN	BHF		~30-50nm/min		Jon P.
PECVD SiN	HF		~500nm/min		Geza	PR does not survive as a mask
Cured SU8 (260 C for 30 min)	Piranha (150mL H2SO4 + 50mL H2O2)		~500nm/s (v. fast)	MAY 27, 2010	Geza	Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
Titanium (sputtered)	BHF	PR	~3.33nm/s (order of magnitude estimate)	JULY 5, 2010	Geza	If you etch for >5min, cure PR at 115C for 15min prior to etch
Ta2O5	HF	no mask used	~100nm/s	JUNE 1, 2011	Geza	-

**Dielectric Deposit**
Material	Equipment	Latest deposit rate	Latest update by	Note
SiN	PECVD
SiO2	PECVD
Ta2O5	Ebeam #2	1A/sec	Hui-Wen	Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
SrF2	Ebeam #2	2-5A/sec	Jon P	Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.

@@ Line 19: / Line 19: @@
 | SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min|| &nbsp; || Geza || &nbsp; || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
 |-
-| SiN || RIE#2 ||SOI ||MHA, 4/20/10|| ~7.4nm/min|| &nbsp; || JonP || &nbsp; ||  Methane/H2/Ar, 500V, , 125mT
+| SiN PE-CVD || RIE#2 ||SOI ||MHA, 4/20/10|| ~7.4nm/min|| &nbsp; || JonP || &nbsp; ||  Methane/H2/Ar, 500V, , 125mT
 |-
 | Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza ||  || &nbsp;