Difference between revisions of "SOI grating definition"
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(→Sweeper Two Etch Depth Grating Process (UNTESTED)) |
(→Sweeper Two Etch Depth Grating Process (UNTESTED)) |
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| Line 49: | Line 49: | ||
Cr Deposition - Ebeam #1 | Cr Deposition - Ebeam #1 | ||
100nm - This is a value that has been calibrated, but there would be value in using 25nm to decrease the undercut | 100nm - This is a value that has been calibrated, but there would be value in using 25nm to decrease the undercut | ||
| − | + | Add a watch sample with orange vacuum tape in the middle | |
| + | Dektak the watch sample after removing tape | ||
Oxide Hardmask Deposition - PlasmaTherm PECVD | Oxide Hardmask Deposition - PlasmaTherm PECVD | ||
50nm SiO2 | 50nm SiO2 | ||
| Line 68: | Line 69: | ||
4th Lens - 2nA | 4th Lens - 2nA | ||
Dose 500uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches with a ~45nm undercut in the 100nm of Cr) | Dose 500uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches with a ~45nm undercut in the 100nm of Cr) | ||
| − | Development | + | EBL Development |
DI Rinse - 60s Removes Aquasave | DI Rinse - 60s Removes Aquasave | ||
N2 Dry - Be gentle the resist can move under high pressure | N2 Dry - Be gentle the resist can move under high pressure | ||
| Line 75: | Line 76: | ||
N2 Dry DO NOT RINSE WITH DI - Be gentle the resist can move under high pressure | N2 Dry DO NOT RINSE WITH DI - Be gentle the resist can move under high pressure | ||
Microscope Inspection - | Microscope Inspection - | ||
| + | AFM Pattern Acknowledgement - | ||
Hardmask Etch - ICP#2 | Hardmask Etch - ICP#2 | ||
O2 Clean - 10min | O2 Clean - 10min | ||
| Line 86: | Line 88: | ||
Cr Etch - ~35nm/min - over etch 25% (3m45s for 100nm) | Cr Etch - ~35nm/min - over etch 25% (3m45s for 100nm) | ||
ICP#2 recipe #145 - Cl2/02 - ?/?sccm - ?Wicp, ?Wccp, ?Pa | ICP#2 recipe #145 - Cl2/02 - ?/?sccm - ?Wicp, ?Wccp, ?Pa | ||
| + | AFM Pattern Acknowledgement - Save grating cross-sections confirm height with Cr and top oxide thickness measured earlier | ||
Oxide Nano Etch - ~80nm/min - over etch 25% (100s for 100nm) | Oxide Nano Etch - ~80nm/min - over etch 25% (100s for 100nm) | ||
ICP#2 recipe #104 - CF4/CHF3/02 - 5/35/10sccm - 500Wicp, 50Wccp, 0.5Pa | ICP#2 recipe #104 - CF4/CHF3/02 - 5/35/10sccm - 500Wicp, 50Wccp, 0.5Pa | ||
| − | AFM Pattern Acknowledgement - Save grating cross-sections | + | AFM Pattern Acknowledgement - Save grating cross-sections confirm height with Cr and lower oxide thickness measured earlier top oxide should be gone. |
Grating Shallow Etch - Si Deep RIE Etcher (50nm) | Grating Shallow Etch - Si Deep RIE Etcher (50nm) | ||
O2 Clean - 30min - Click standby, then enter manual mode. | O2 Clean - 30min - Click standby, then enter manual mode. | ||
| Line 95: | Line 98: | ||
2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | 2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | ||
Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | ||
| − | Rates: ZEP ~ 40nm/min, Si ~170nm/min w/o Sanovac 5, ~141nm/min w/ Sanovac 5 | + | Rates: ZEP ~ 35-40nm/min, Si ~170nm/min w/o Sanovac 5, ~63-141nm/min w/ Sanovac 5 |
| − | AFM Pattern Acknowledgement - Save grating cross-sections | + | AFM Pattern Acknowledgement - Save grating cross-sections Cr mask will show a negligible etch so the Si depth should be clear. |
Add GRAT1 layer (Protects Sweeper gratings) | Add GRAT1 layer (Protects Sweeper gratings) | ||
Spin AZ4210 (4000rpm, 30sec) | Spin AZ4210 (4000rpm, 30sec) | ||
| Line 105: | Line 108: | ||
Focus Offset: 0 | Focus Offset: 0 | ||
NO POST-EXPOSURE BAKE | NO POST-EXPOSURE BAKE | ||
| − | Develop (AZ400K 1:4 diluted, 2min) | + | Develop (AZ400K 1:4 diluted, 2min(way over-developed) |
DI Rinse | DI Rinse | ||
Microscope Inspection - | Microscope Inspection - | ||
| − | Grating Finish Deep Etch - Etch the difference in depths (deep target - shallow target) | + | Grating Finish Deep Etch - Etch the difference in depths (deep target (275nm) - shallow target (50nm) = 225nm) |
AFM etch depth calibration recommended | AFM etch depth calibration recommended | ||
O2 Clean - 30min - Click standby, then enter manual mode. | O2 Clean - 30min - Click standby, then enter manual mode. | ||
| Line 115: | Line 118: | ||
2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | 2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | ||
Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W | ||
| − | + | Rates: ZEP ~ 35-40nm/min, Si ~170nm/min w/o Sanovac 5, ~63-141nm/min w/ Sanovac 5 | |
| − | Strip PR | + | Strip PR |
1165 Soak at 80C - 10min | 1165 Soak at 80C - 10min | ||
PEII - O2 Descum (100W, 300mTorr, 60sec) | PEII - O2 Descum (100W, 300mTorr, 60sec) | ||
| Line 122: | Line 125: | ||
BHF | BHF | ||
AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep | AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep | ||
| − | |||
SEM - Save top down SEMs for different locations and different grating types. | SEM - Save top down SEMs for different locations and different grating types. | ||
Revision as of 16:22, 19 January 2012
Back to Process_Hybrid_Silicon.
Contents
Past Processes
Sweeper Vertical Grating Coupler Process
Pre-clean: Remove native oxide and/or dielectric hardmask
HF dip
Ebeam PR spin coat (2:1 ZEP)
ACE,ISO,DI
PEII - O2 Descum (100W, 300mTorr, 60sec)
Dehydration Bake (150C, 5min)
N2 Gun (1min) Cools and cleans wafer
Spin 2:1 ZEP (3000rpm, 30sec) - Recipe 5 ~225nm, Use a filtered syringe
Pre-Exposure Bake (180C, 4min) Cover hotplate top to prevent additional particulate
Thermal Au Evaporation
Evaporate 11nm Au
Ebeam Writing Conditions
4th Lens
Dose 350uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches if the substrate is not highly doped)
Development
Remove Au in wet Au etchant 10s
DI Rinse
N2 Dry
1:1 MIBK:ISO Development - 60s Use a fresh batch
9:1 MIBK:ISO Rinse - 15s DO NOT RINSE WITH DI
N2 Dry DO NOT RINSE WITH DI
Grating Etch
AFM etch depth calibration recommended
Single Step Bosch Etch Process - JTB_GR
Rates:
~170nm/min w/o Sanovac 5
~141nm/min w/ Sanovac 5
Strip ZEP (2:1)
1165 Soak at 80C - 10min
PEII - O2 Descum (100W, 300mTorr, 60sec)
Standard Hybrid Si Process
link to .xls
Process Development Summary
Dose/Duty Cycle Analysis with Proximity Effect Observations
File:2010-03-01 Grating Update.pptx
File:2010-12-07 Grating Update.pptx
Future Untested Processes
Sweeper Two Etch Depth Grating Process (UNTESTED)
Oxide Hardmask Deposition - PlasmaTherm PECVD
50+50nm SiO2
Add Si watch sample
VASE Si Watch Sample - Note Oxide Height
Cr Deposition - Ebeam #1
100nm - This is a value that has been calibrated, but there would be value in using 25nm to decrease the undercut
Add a watch sample with orange vacuum tape in the middle
Dektak the watch sample after removing tape
Oxide Hardmask Deposition - PlasmaTherm PECVD
50nm SiO2
Add Si watch sample
VASE Si Watch Sample - Note Oxide Height
Ebeam Resist spin coat (2:1 ZEP)
ACE,ISO,DI
PEII - O2 Descum (100W, 300mTorr, 30sec)
Dehydration Bake (150C, 5min)
N2 Gun (1min) Cools and cleans wafer
HMDS 5000rpm 30s - Let sit on chip for 30s before spinning
Spin 2:1 ZEP:Anisol (3000 rpm, 30sec) - Recipe 5 ~225nm, Use a filtered syringe
Pre-Exposure Bake (180C, 4min) Cover hotplate top to prevent additional particulate
Conductive polymer spin coat
Aquasave (3000 rpm, 30sec) - Recipe 5
Pre-Exposure bake (90C, 30sec)
Ebeam Writing Conditions
4th Lens - 2nA
Dose 500uC/cm2 (Please be aware this is pitch dependent, but has shown good results over a range of pitches with a ~45nm undercut in the 100nm of Cr)
EBL Development
DI Rinse - 60s Removes Aquasave
N2 Dry - Be gentle the resist can move under high pressure
1:1 MIBK:ISO Development - 60s Use a fresh batch
9:1 MIBK:ISO Rinse - 15s DO NOT RINSE WITH DI
N2 Dry DO NOT RINSE WITH DI - Be gentle the resist can move under high pressure
Microscope Inspection -
AFM Pattern Acknowledgement -
Hardmask Etch - ICP#2
O2 Clean - 10min
2min season - ICP#2 recipe #104 - CF4/CHF3/02 - 5/35/10sccm - 500Wicp, 50Wccp, 0.5Pa
Oxide Nano Etch - ~80nm/min - over etch 25% (50s for 50nm)
ICP#2 recipe #104 - CF4/CHF3/02 - 5/35/10sccm - 500Wicp, 50Wccp, 0.5Pa
Strip ZEP:Anisol (2:1)
1165 Soak at 80C - 10min
PEII - O2 Descum (100W, 300mTorr, 60sec)
AFM Pattern Acknowledgement - Save grating cross-sections confirm height with oxide thickness measured earlier
Cr Etch - ~35nm/min - over etch 25% (3m45s for 100nm)
ICP#2 recipe #145 - Cl2/02 - ?/?sccm - ?Wicp, ?Wccp, ?Pa
AFM Pattern Acknowledgement - Save grating cross-sections confirm height with Cr and top oxide thickness measured earlier
Oxide Nano Etch - ~80nm/min - over etch 25% (100s for 100nm)
ICP#2 recipe #104 - CF4/CHF3/02 - 5/35/10sccm - 500Wicp, 50Wccp, 0.5Pa
AFM Pattern Acknowledgement - Save grating cross-sections confirm height with Cr and lower oxide thickness measured earlier top oxide should be gone.
Grating Shallow Etch - Si Deep RIE Etcher (50nm)
O2 Clean - 30min - Click standby, then enter manual mode.
(the electrode temp must be with in bounds to enter standby mode)
Load Clean wafer. Parameters 10C,30mTorr,He=10,Ar=10,O2=30,Power RF2=800
2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
Rates: ZEP ~ 35-40nm/min, Si ~170nm/min w/o Sanovac 5, ~63-141nm/min w/ Sanovac 5
AFM Pattern Acknowledgement - Save grating cross-sections Cr mask will show a negligible etch so the Si depth should be clear.
Add GRAT1 layer (Protects Sweeper gratings)
Spin AZ4210 (4000rpm, 30sec)
Pre-Exposure Bake (95C, 1min)
Lithography - Pattern a window in the deep etch region
Litho Tool: GCA Stepper / Autostepper
Exposure: 3sec / 1sec
Focus Offset: 0
NO POST-EXPOSURE BAKE
Develop (AZ400K 1:4 diluted, 2min(way over-developed)
DI Rinse
Microscope Inspection -
Grating Finish Deep Etch - Etch the difference in depths (deep target (275nm) - shallow target (50nm) = 225nm)
AFM etch depth calibration recommended
O2 Clean - 30min - Click standby, then enter manual mode.
(the electrode temp must be with in bounds to enter standby mode)
Load Clean wafer. Parameters 10C,30 mTorr,He=10,Ar=10,O2=30,Power RF2=800
2min season - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
Single step Bosch etch process - BOV_J_01 - C4F8/SF6/Ar = 56/24/20sccm @ ICP/CCP = 850/18W
Rates: ZEP ~ 35-40nm/min, Si ~170nm/min w/o Sanovac 5, ~63-141nm/min w/ Sanovac 5
Strip PR
1165 Soak at 80C - 10min
PEII - O2 Descum (100W, 300mTorr, 60sec)
AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep
BHF
AFM Pattern Acknowledgement - Save grating cross-sections from AFM test structure shallow and deep
SEM - Save top down SEMs for different locations and different grating types.
