Difference between revisions of "Si/Ge PD"

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(Fabrication)
(General fabrication process development)
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= General fabrication process development =
 
= General fabrication process development =
  
 +
== Ge/Si hardmask etching ==
 +
ICP etches using CF4 and CHF3 for SiO2 etching: [[file:Alternatives_to_SiOVert.pptx]].  At the time, I was using SPR220-3 as a mask, but now I use 955-0.9, which seems to come off much more cleanly.
 
== Vertical Ge etching==
 
== Vertical Ge etching==
 
ICP etches using Cl, CF4, and SF6 chemistries: [[file: Vertical_Ge_etching.pptx]]
 
ICP etches using Cl, CF4, and SF6 chemistries: [[file: Vertical_Ge_etching.pptx]]
 
== N-implant verification==
 
== N-implant verification==
 
Phosphorous implant in Silicon: [[file:N-implant_verification.pptx]]
 
Phosphorous implant in Silicon: [[file:N-implant_verification.pptx]]

Revision as of 14:38, 27 April 2012

Overview

Gen 1: surface-normal PD

Design

Fabrication

Process flow: File:SiGePD v2 proc flow.pptx

Process follower: File:SiGePD v2 wcomments.xlsx

Results

Gen 2: waveguide PD

Design

Fabrication

Fabrication for the waveguide design is composed of two parts: pre-growth Si processing and post-growth processing. The pre-growth processing included n-implant and annealing steps. Since this had not been done by our group before, I did a brief experiment to ensure that the final doping would match the designed doping. A description of the experiment is below.

The full process flow is here: File:WGPD fullprocess.pptx


Tht process follower is here: File:WGPD Si v2.xlsx

General fabrication process development

Ge/Si hardmask etching

ICP etches using CF4 and CHF3 for SiO2 etching: File:Alternatives to SiOVert.pptx. At the time, I was using SPR220-3 as a mask, but now I use 955-0.9, which seems to come off much more cleanly.

Vertical Ge etching

ICP etches using Cl, CF4, and SF6 chemistries: File:Vertical Ge etching.pptx

N-implant verification

Phosphorous implant in Silicon: File:N-implant verification.pptx