Difference between revisions of "Cleanroom Reports"
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| Cured SU8 (260 C for 30 min)|| Piranha (150mL H2SO4 + 50mL H2O2) || || ~500nm/s (v. fast) || MAY 27, 2010 || Geza || || Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | | Cured SU8 (260 C for 30 min)|| Piranha (150mL H2SO4 + 50mL H2O2) || || ~500nm/s (v. fast) || MAY 27, 2010 || Geza || || Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | ||
| − | |} | + | | Titanium || BHF || || ~3.33nm/s (order of magnitude estimate) || JULY 5, 2010 || Geza || || If you use PR as a mask AND if you etch for >5min, cure PR at 115C for 15min|} |
Revision as of 09:52, 6 July 2010
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
- Wet etch recipes:
| Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|---|
| Si | ICP#2 | SOI | Bowers si etch # 127 | drop from 4nm/s to 3nm/s | APR 27, 2010 | Jon Peters | ICP#2 si etch rate | |
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | Bowers SiOxVert etch # 101 | ~111 nm/min | MAY 27, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W) | ~275 nm/min | JUN 1, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W + 40 sccm O2) | ~465 nm/min | JUN 1, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (300W + 40 sccm O2) | ~690 nm/min | JUN 1, 2010 | Geza | Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. |
| Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note | ||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||||||||||||||||||||||||||||||||||||||
| PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||||||||||||||||||||||||||||||||||||||
| PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||||||||||||||||||||||||||||||||||||||
| PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||||||||||||||||||||||||||||||||||||||
| Cured SU8 (260 C for 30 min) | Piranha (150mL H2SO4 + 50mL H2O2) | ~500nm/s (v. fast) | MAY 27, 2010 | Geza | Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | Titanium | BHF | ~3.33nm/s (order of magnitude estimate) | JULY 5, 2010 | Geza | }
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