Difference between revisions of "Measurements"
(→Atomic Force Microscopy (AFM)) |
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it recommends a specific GTK+, not sure why it matters though. If you | it recommends a specific GTK+, not sure why it matters though. If you | ||
have it from Pidgin or something I'm sure it'll work. | have it from Pidgin or something I'm sure it'll work. | ||
| + | |||
| + | == X-Ray Diffraction (XRD) == | ||
| + | XRD qualification of wafer: | ||
| + | |||
| + | This is one scan in ~20minutes if you know the offcut and direction already. | ||
| + | |||
| + | #1 Note offcut amount and direction. Draw arrow relative to wafer flats. ([110] is the direction perpendicular to the major flat) | ||
| + | |||
| + | #2 ID the layer peak(s), if separated from the substrate peak, and give the strain(s) (or just peak separation) | ||
| + | |||
| + | #3 ID superlattice/QW fringes. Count them (e.g. -2 to +3) and note spacing in arcseconds | ||
| + | |||
| + | #4 Make note of any other strong fringe peaks or broad/mysterious layer peaks | ||
| + | |||
| + | NB: Offcut on GaAs may be up to 10degrees. (XRD person try a pole search to locate). InP offcut ~0.2degrees is standard and often not noticed during XRD. | ||
= Optical Characterization = | = Optical Characterization = | ||
Revision as of 11:38, 18 November 2011
Contents
Materials Characterization
Atomic Force Microscopy (AFM)
CNSI has a room devoted to AFM including 2 models Asylum and NanoScope. Contact Mark Cornish <cornish@engineering.ucsb.edu> to get tips and register. The cleanroom also has a NanoScope AFM.
Asylum AFM
Asylum_AFM_MFC-3D_Procedure_v1_-_Basic_Tapping_Mode.docx
NanoScope AFM
Analysis
Igor Pro demo: http://www.wavemetrics.com/support/demos.htm Asylum download requires a login, and to get one takes a little while. Is it possible to upload that to the wiki? Gwyddion and GTK+: http://gwyddion.net/download.php#stable-osx it recommends a specific GTK+, not sure why it matters though. If you have it from Pidgin or something I'm sure it'll work.
X-Ray Diffraction (XRD)
XRD qualification of wafer:
This is one scan in ~20minutes if you know the offcut and direction already.
- 1 Note offcut amount and direction. Draw arrow relative to wafer flats. ([110] is the direction perpendicular to the major flat)
- 2 ID the layer peak(s), if separated from the substrate peak, and give the strain(s) (or just peak separation)
- 3 ID superlattice/QW fringes. Count them (e.g. -2 to +3) and note spacing in arcseconds
- 4 Make note of any other strong fringe peaks or broad/mysterious layer peaks
NB: Offcut on GaAs may be up to 10degrees. (XRD person try a pole search to locate). InP offcut ~0.2degrees is standard and often not noticed during XRD.
Optical Characterization
LI curves
"Example:" This technique allows you to measure output power vs. injection current. The follwoing equipment is used:
- Keithley (link to equipment)
- Agilent powermeter (link)
The measurement can be controlled using this (link) software. A sample plot looks like this: (insert picture). More about this technique can be found in:
- Mr.X et al., IEEE Journ. of Lightwave Technol., vol. x, pp. xxx-xxx, Aug. 2005
- Our own uploaded description (in doc format maybe)
Electrical characterization
Analysis: http://gwyddion.net/download.php#stable-osx
Microwave measurements
Linearity measurements (OIP2, OIP3, SFDR,...)
