Difference between revisions of "Process Hybrid Silicon"
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| Wafer bonding II || || || [[media:O2PlamsaDirectBond_DiLiang.doc | direct wafer bonding]] || O2 plasma assisted wafer bonding (rev. 2008) | | Wafer bonding II || || || [[media:O2PlamsaDirectBond_DiLiang.doc | direct wafer bonding]] || O2 plasma assisted wafer bonding (rev. 2008) | ||
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− | | Non-planar wafer bonding || || || | + | | Non-planar wafer bonding || || || [[media:Nonplanar_wafer_bonding_recipe.doc | non-planar bonding]] || Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske) |
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Revision as of 15:37, 17 March 2011
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
SP-VC | Si VC etch | Vertical channel etch | ||
HSP-METCH | Mesa etch | Forms mesa | ||
HSP-QW | III-V QW etch | Quantum well etch | ||
HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
HSP-METAL | thin metal | Thin metal deposition | ||
HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal. Contains PR spin speeds and exposure times for Stepper (6300) | |
Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske) |