Difference between revisions of "Modulator"
From OptoelectronicsWiki
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Process flow: | Process flow: | ||
| − | xls file: [[Media:EAM10_process.xls]] | + | xls file: [[Media:EAM10_process.xls]] |
| − | slides: [[Media:EAM10_process.pptx]] | + | slides: [[Media:EAM10_process.pptx]] |
Mask files: | Mask files: | ||
| − | main file: [[Media:EAM10_Mask.tdb]] | + | main file: [[Media:EAM10_Mask.tdb]] |
| − | n contact layer: [[Media:EAM10_nInP.gds]] | + | n contact layer: [[Media:EAM10_nInP.gds]] |
== Report == | == Report == | ||
Revision as of 18:33, 6 April 2011
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Design
Process
Process flow:
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask files:
main file: Media:EAM10_Mask.tdb
n contact layer: Media:EAM10_nInP.gds
Report
The second generation
Time: 2011
