Difference between revisions of "Modulator"
From OptoelectronicsWiki
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n contact layer: [[Media:EAM10_nInP.gds]] | n contact layer: [[Media:EAM10_nInP.gds]] | ||
Revision as of 18:34, 6 April 2011
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Design
Process
Process flow:
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask files:
main ledit file: Media:EAM10_Mask.tdb
n contact layer: Media:EAM10_nInP.gds
Report
The second generation
Time: 2011
