Difference between revisions of "Cleanroom Reports"
From OptoelectronicsWiki
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| SiO2 || PECVD || || || || || | | SiO2 || PECVD || || || || || | ||
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− | | Ta2O5 || Ebeam #2 || 1A/sec || || Hui-Wen || [[media:AR_Coating.xlsx|Script]] || Deposit 180nm on blank Si sample, measure index and thickness, calculate required thickness from index (use Excel script), deposit dielectric on both facets (one at a time). Generally 180nm, n~2. | + | | Ta2O5 || Ebeam #2 || 1A/sec || || Hui-Wen || [[media:AR_Coating.xlsx|Script]] || Deposit 180nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (use Excel script), deposit dielectric on both facets (one at a time). Generally 180nm, n~2.0, purple color. |
|- | |- | ||
| SrF2 || Ebeam #2 || 2-5A/sec || || Jon P|| || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. | | SrF2 || Ebeam #2 || 2-5A/sec || || Jon P|| || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. | ||
|} | |} |
Revision as of 14:37, 1 June 2011
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
- Wet etch recipes:
- Refractive indexes:
Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|---|
Si | ICP#2 | SOI | Bowers si etch # 127 | 4nm/s | JUN 12, 2010 | Jon Peters | ICP#2 si etch rate | |
SiO2 | ICP#2 | SOI | SiOxVert, recipe #101 | ~252nm/min | NOV 9, 2010; | Molly | Media:SiO2_Vert.pdf | |
SiN | ICP#2 | SOI | SiOxVert, recipe #101 | ~300nm/min | Geza | |||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | Bowers SiOxVert etch # 101 | ~111 nm/min | MAY 27, 2010 | Geza | ||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W) | ~275 nm/min | JUN 1, 2010 | Geza | ||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W + 40 sccm O2) | ~465 nm/min | JUN 1, 2010 | Geza | ||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (300W + 40 sccm O2) | ~690 nm/min | JUN 1, 2010 | Geza | Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. |
Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|
Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||
PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
Cured SU8 (260 C for 30 min) | Piranha (150mL H2SO4 + 50mL H2O2) | ~500nm/s (v. fast) | MAY 27, 2010 | Geza | Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | ||
Titanium (sputtered) | BHF | PR | ~3.33nm/s (order of magnitude estimate) | JULY 5, 2010 | Geza | If you etch for >5min, cure PR at 115C for 15min prior to etch | |
Ta2O5 | HF | no mask used | ~100nm/s | JUNE 1, 2011 | Geza | - |
Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|
SiN | PECVD | |||||
SiO2 | PECVD | |||||
Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | Script | Deposit 180nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (use Excel script), deposit dielectric on both facets (one at a time). Generally 180nm, n~2.0, purple color. | |
SrF2 | Ebeam #2 | 2-5A/sec | Jon P | Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. |