Difference between revisions of "Cleanroom Reports"

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| SrF2 || Ebeam #2 || 2-5A/sec ||   || Jon P||   || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.
 
| SrF2 || Ebeam #2 || 2-5A/sec ||   || Jon P||   || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.
 
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! Etched material !! Equipment !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note
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! Equipment !! Resist !!  Polarity !! Hardmask !! Substrate !! Pre-Exposure Bake !! Exposure Dose !! Focus !! Post-Exposure Bake !! Development !! Report !! Author
 
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| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||4nm/s|| JUN 12, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls‎|ICP#2 si etch rate]] || 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
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| Autostepper || SPR 955 0.9 ||Positive||200nm PECVD Oxide ||GaAs|| 95C,90s || ~.42s report variable || 0 ||110C,90s || MIF726,40s ||  || Jock
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| SiO2 || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~252nm/min|| NOV 9, 2010; || Molly || [[Media:SiO2_Vert.pdf]] || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
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| SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min||   || Geza ||   || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
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| SiN PE-CVD || RIE#2 ||SOI ||MHA, 4/20/10|| ~7.4nm/min|| Sept 26, 2011; || JonP || &nbsp; ||  Methane/Hydrogen/Ar, 500V, , 125mT. Etched for 10 min using 955 1.8 resist as etch mask and then measured delta post strip. Tried using Pd/Ti/Pd/Au as etch mask on second piece but gold gone post etch and delta >300nm when it should be <300nm
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| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza ||  || &nbsp;
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| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W) ||~275 nm/min || JUN 1, 2010 || Geza ||  || &nbsp;
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| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W + 40 sccm O2) ||~465 nm/min || JUN 1, 2010 || Geza ||  || &nbsp;
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| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (300W + 40 sccm O2) ||~690 nm/min || JUN 1, 2010 || Geza ||  || Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
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Revision as of 11:51, 6 November 2011

  • List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
  • Please update yours if you run any calibration so that everyone can keep track of them.
  • Wet etch recipes:
http://www.cleanroom.byu.edu/wet_etch.phtml
http://terpconnect.umd.edu/~browns/wetetch.html
  • Refractive indexes:
http://refractiveindex.info/


Dry Etch
Etched material Equipment Substrate Recipe Latest etch rate Latest update date Latest update by Calib. file Note
Si ICP#2 SOI Bowers si etch # 127 4nm/s JUN 12, 2010 Jon Peters ICP#2 si etch rate 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
SiO2 ICP#2 SOI SiOxVert, recipe #101 ~252nm/min NOV 9, 2010; Molly Media:SiO2_Vert.pdf 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN ICP#2 SOI SiOxVert, recipe #101 ~300nm/min   Geza   40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN PE-CVD RIE#2 SOI MHA, 4/20/10 ~7.4nm/min Sept 26, 2011; JonP   Methane/Hydrogen/Ar, 500V, , 125mT. Etched for 10 min using 955 1.8 resist as etch mask and then measured delta post strip. Tried using Pd/Ti/Pd/Au as etch mask on second piece but gold gone post etch and delta >300nm when it should be <300nm
Cured SU8 (260 C for 30 min) ICP#2 SOI Bowers SiOxVert etch # 101 ~111 nm/min MAY 27, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W) ~275 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W + 40 sccm O2) ~465 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (300W + 40 sccm O2) ~690 nm/min JUN 1, 2010 Geza Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.


Wet Etch
Etched material Solution Mask Latest etch rate Latest update date Latest update by Calib. file Note
Thermal oxide BHF PR or dielectric ~100nm/min        
PECVD oxide BHF PR or dielectric ~225nm/min        
PECVD SiN BHF   ~30-50nm/min   Jon P.    
PECVD SiN HF   ~500nm/min   Geza   PR does not survive as a mask
Cured SU8 (260 C for 30 min) Piranha (150mL H2SO4 + 50mL H2O2)   ~500nm/s (v. fast) MAY 27, 2010 Geza   Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
Titanium (sputtered) BHF PR ~3.33nm/s (order of magnitude estimate) JULY 5, 2010 Geza   If you etch for >5min, cure PR at 115C for 15min prior to etch
Ta2O5 HF no mask used ~100nm/s JUNE 1, 2011 Geza   -


Dielectric Deposit
Material Equipment Latest deposit rate Latest update date Latest update by Calib. file Note
SiN PECVD          
SiO2 PECVD          
Ta2O5 Ebeam #2 1A/sec   Hui-Wen   Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
SrF2 Ebeam #2 2-5A/sec   Jon P   Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.


Lithography
Equipment Resist Polarity Hardmask Substrate Pre-Exposure Bake Exposure Dose Focus Post-Exposure Bake Development Report Author
Autostepper SPR 955 0.9 Positive 200nm PECVD Oxide GaAs 95C,90s ~.42s report variable 0 110C,90s MIF726,40s Jock
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