Difference between revisions of "Si/Ge PD"
From OptoelectronicsWiki
(→Fabrication) |
(→Fabrication) |
||
| Line 23: | Line 23: | ||
The full process flow is here: [[file:WGPD_fullprocess.pptx]] | The full process flow is here: [[file:WGPD_fullprocess.pptx]] | ||
| + | |||
| + | |||
| + | Tht process follower is here: [[file:WGPD_Si_v2.xlsx]] | ||
= General fabrication process development = | = General fabrication process development = | ||
Revision as of 14:33, 27 April 2012
Contents
Overview
Gen 1: surface-normal PD
Design
Fabrication
Process flow: File:SiGePD v2 proc flow.pptx
Process follower: File:SiGePD v2 wcomments.xlsx
Results
Gen 2: waveguide PD
Design
Fabrication
Fabrication for the waveguide design is composed of two parts: pre-growth Si processing and post-growth processing. The pre-growth processing included n-implant and annealing steps. Since this had not been done by our group before, I did a brief experiment to ensure that the final doping would match the designed doping. A description of the experiment is below.
The full process flow is here: File:WGPD fullprocess.pptx
Tht process follower is here: File:WGPD Si v2.xlsx
General fabrication process development
Vertical Ge etching
ICP etches using Cl, CF4, and SF6 chemistries: File:Vertical Ge etching.pptx
N-implant verification
Phosphorous implant in Silicon: File:N-implant verification.pptx
