Difference between revisions of "DUV Stepper development"

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(Specs)
 
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===Specs===
 
===Specs===
2 Layers on 500nm SOI - 250nm Si etch, 500nm Si Etch
+
Total mask area 26x22mm.
  
Each layer is approximately 13x14mm
+
PULSAR takes the top 8mm of this mask.
  
 +
2 Layers on 500nm SOI - 250nm Si etch, 500nm Si Etch.
 +
 +
Each Si layer is approximately 13x14mm.
  
 
===Ideas for test mask===
 
===Ideas for test mask===

Latest revision as of 12:29, 1 June 2012

Planning[edit]

  • Martijn will compile final mask design; Jock will coordinate full mask plate design;
  • All designers (see below) send design (detailed geometry) and proposed splits to Martijn before May 17.

Specs[edit]

Total mask area 26x22mm.

PULSAR takes the top 8mm of this mask.

2 Layers on 500nm SOI - 250nm Si etch, 500nm Si Etch.

Each Si layer is approximately 13x14mm.

Ideas for test mask[edit]

1) Reflector based on photonic crystal or Bragg Grating/Sampled Bragg Grating -- JKD

2) DC's, star couplers -- Martijn

3) side gratings -- Michael D

4) resolution markers -- Sudha

5) Grating pattern (etching Lag effect) File:LagGrating.gds -- Yongbo

6) polarization converters/rotators by using off-center longitudinal trenches -- open

7) Ring, MZI-Ring, two-bus ring, EIT Dual Ring(if there is space), S-bended Ring -- Yongbo

8) Tapers (polished to check the mode profile), two-level tapers -- Jock