Difference between revisions of "Process Hybrid Silicon Overview"
From OptoelectronicsWiki
(Process Hybrid Silicon Overview) |
(→EPHI Shuttle run-1 (SOA only)) |
||
| Line 1: | Line 1: | ||
| − | == | + | ==Summary== |
[[media:Process follower.docx | Complete Process Follower]] | [[media:Process follower.docx | Complete Process Follower]] | ||
Revision as of 14:41, 12 October 2012
Summary
| Process ID | Process flow | Process follower | Description |
|---|---|---|---|
| WG etch | Complete Flow A | Si WG etch | Rib waveguide formation, Alignment marks. |
| VC etch | Si VC etch | Vertical channel etch | |
| Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
| InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
| QW wet etch | QW etch | Active layer wet etch | |
| N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
| Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
| P-/Probepad metal deposition | Probepad metallization | P-/probepad metal stack (Pd/Ti/Pd/Au) |
| Process ID | Process flow | Process follower | Description |
|---|---|---|---|
| WG etch | Complete Flow B | Si WG etch | Rib waveguide formation, Alignment marks. |
| VC etch | Si VC etch | Vertical channel etch | |
| Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
| P-metal deposition | p-metal deposition | P-metal stack (Pd/W) | |
| InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
| QW wet etch | QW etch | Active layer wet etch | |
| N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
| Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
| Probepad metal deposition | Probepad metallization | Probepad metal stack (Pd/Ti/Pd/Au) |
