Difference between revisions of "E-Beam Lithography (EBL)"
From OptoelectronicsWiki
Jaredhulme (Talk | contribs) (→Proximity Correction) |
|||
Line 2: | Line 2: | ||
* [[media:Proximity Effect Correction for Electron Beam Lithography.ppt|Proximity Effect Correction Experiment]] | * [[media:Proximity Effect Correction for Electron Beam Lithography.ppt|Proximity Effect Correction Experiment]] | ||
+ | |||
+ | |||
+ | login to BEAMER server: | ||
+ | |||
+ | 128.111.192.142 | ||
+ | |||
+ | u:bowers | ||
+ | |||
+ | p:femto | ||
+ | |||
+ | |||
+ | Run a monte carlo simulation of the "substrate" and resist you are using in MC^3. | ||
+ | |||
+ | For example: ZEP(2k) on 500nm SOI with 1um BOx. | ||
+ | |||
+ | 1) Use the drop down tab to select PENELOPE. | ||
+ | |||
+ | 2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness. | ||
+ | |||
+ | 3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer | ||
+ | |||
+ | |||
Return to [[Cleanroom_Equipment]] | Return to [[Cleanroom_Equipment]] |
Revision as of 11:57, 20 February 2013
Proximity Correction
login to BEAMER server:
128.111.192.142
u:bowers
p:femto
Run a monte carlo simulation of the "substrate" and resist you are using in MC^3.
For example: ZEP(2k) on 500nm SOI with 1um BOx.
1) Use the drop down tab to select PENELOPE.
2) Build your layer stack in the PELELOPE GUI. z-Resolution must be an integer multiple of the thickness.
3) Check Save the result for the resist layer, for this example we have saved the "ZEP520_" layer
Return to Cleanroom_Equipment