Difference between revisions of "Cleanroom Reports"
From OptoelectronicsWiki
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|+ '''Dry Etch''' | |+ '''Dry Etch''' | ||
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− | ! Equipment !! Etched material !! Substrate !!Recipe !!Latest etch rate !! Latest update date !! Calib. file !! Note | + | ! Equipment !! Etched material !! Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note |
|- | |- | ||
− | | ICP#2 || Si || SOI ||Bowers si etch # 127 ||~ 4nm/sec || APR 02, 2010 || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || | + | | ICP#2 || Si || SOI ||Bowers si etch # 127 ||~ 4nm/sec || APR 02, 2010 || Hui-Wen || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || |
+ | |- | ||
+ | |} | ||
+ | |||
+ | |||
+ | {| border="3" | ||
+ | |+ '''Wet Etch''' | ||
+ | |- style="background:purple; color:white" | ||
+ | ! Etched material !! Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note | ||
+ | |- | ||
+ | | Thermal oxide || BHF ||PR or dielectric || ~100nm/min || || || || | ||
+ | |- | ||
+ | | PECVD oxide || BHF ||PR or dielectric || ~225nm/min || || || || | ||
+ | |- | ||
+ | | PECVD SiN || HF || || ~500nm/min || || Geza || || PR does not survive as a mask | ||
|- | |- | ||
|} | |} |
Revision as of 12:20, 2 April 2010
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
Equipment | Etched material | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|---|
ICP#2 | Si | SOI | Bowers si etch # 127 | ~ 4nm/sec | APR 02, 2010 | Hui-Wen | ICP#2 si etch rate |
Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|
Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask |