Difference between revisions of "Cleanroom Reports"
From OptoelectronicsWiki
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| SiO2 || PECVD || || || || || | | SiO2 || PECVD || || || || || | ||
|- | |- | ||
− | | Ta2O5 || Ebeam #2 || | + | | Ta2O5 || Ebeam #2 || 1A/sec || || Hui-Wen || || AR coating |
|- | |- | ||
|} | |} |
Revision as of 12:29, 2 April 2010
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|---|
Si | ICP#2 | SOI | Bowers si etch # 127 | ~ 4nm/sec | APR 02, 2010 | Hui-Wen | ICP#2 si etch rate |
Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|
Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
PECVD SiN |
Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|
SiN | PECVD | |||||
SiO2 | PECVD | |||||
Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | AR coating |