Difference between revisions of "Cleanroom Reports"
From OptoelectronicsWiki
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! Etched material !! Equipment !! Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note | ! Etched material !! Equipment !! Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note | ||
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− | | Si || ICP#2 ||SOI ||Bowers si etch # 127 ||~ 3nm/sec || APR | + | | Si || ICP#2 ||SOI ||Bowers si etch # 127 ||~ 3nm/sec || APR 27, 2010 || Hui-Wen || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || |
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|} | |} |
Revision as of 15:23, 28 April 2010
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|---|
Si | ICP#2 | SOI | Bowers si etch # 127 | ~ 3nm/sec | APR 27, 2010 | Hui-Wen | ICP#2 si etch rate |
Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|
Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||
PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask |
Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|
SiN | PECVD | |||||
SiO2 | PECVD | |||||
Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | AR coating |