Difference between revisions of "Process Hybrid Silicon"
From OptoelectronicsWiki
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| − | |+ ''' | + | |+ '''Single-step hybrid silicon processes''' |
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! Process ID !! Version !! Process flow !! Process follower !! Description | ! Process ID !! Version !! Process flow !! Process follower !! Description | ||
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|HSP-PP || || || [[media:Probe_pad.xlsx | Probe pad deposition]] | |HSP-PP || || || [[media:Probe_pad.xlsx | Probe pad deposition]] | ||
||Pattern and deposit probe metal | ||Pattern and deposit probe metal | ||
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| Wafer bonding || || || [[Media:Wafer_Bonding_guide_by_Mike_rev_1.docx | Bonding]]|| Beginner's guide to plasma assisted wafer bonding | | Wafer bonding || || || [[Media:Wafer_Bonding_guide_by_Mike_rev_1.docx | Bonding]]|| Beginner's guide to plasma assisted wafer bonding | ||
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| + | |+ '''Full device run hybrid silicon processes''' | ||
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| + | ! Process ID !! Version !! Process flow !! Process follower !! Description | ||
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| + | | PHASER || 2 || [[media:090810_filter_rev2_process flow.ppt | PHASER]] || [[media:090811_recipe_optical filter_rev2_batch1.xls | PHASER]] || PHASER (SOAs, thermal phase tuning pads, MMIs) process flow | ||
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| + | | Epump 2 || || [[media:Self_Aligned_Process_Flow_awfang0308.ppt | process flow ]] || [[media:Epump2_Proton_Followerrev3.xls | Epump 2]] || Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | ||
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| + | | Self-aligned rev. 2 || || [[media:Self_Aligned_Process_Flow_awfang0308.ppt | process flow ]] || [[media:Self_aligned_process.rev_2.doc | self rev. 2]] || Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) | ||
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Revision as of 15:48, 17 March 2011
| Process ID | Version | Process flow | Process follower | Description |
|---|---|---|---|---|
| SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
| SP-VC | Si VC etch | Vertical channel etch | ||
| HSP-METCH | Mesa etch | Forms mesa | ||
| HSP-QW | III-V QW etch | Quantum well etch | ||
| HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
| HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
| HSP-METAL | thin metal | Thin metal deposition | ||
| HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
| Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
| Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
| Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske) | ||
| TLM only | TLM only | Post-bond process for use with a TLM-only mask set |
| Process ID | Version | Process flow | Process follower | Description |
|---|---|---|---|---|
| PHASER | 2 | PHASER | PHASER | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow |
| Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
| Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) |
