Cleanroom Reports
From OptoelectronicsWiki
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
- Wet etch recipes:
- Refractive indexes:
| Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|---|
| Si | ICP#2 | SOI | Bowers si etch # 127 | 4nm/s | JUN 12, 2010 | Jon Peters | ICP#2 si etch rate | |
| SiO2 | ICP#2 | SOI | SiOxVert, recipe #101 | ~220nm/min | ||||
| SiN | ICP#2 | SOI | SiOxVert, recipe #101 | ~300nm/min | Geza | |||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | Bowers SiOxVert etch # 101 | ~111 nm/min | MAY 27, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W) | ~275 nm/min | JUN 1, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W + 40 sccm O2) | ~465 nm/min | JUN 1, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (300W + 40 sccm O2) | ~690 nm/min | JUN 1, 2010 | Geza | Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. |
| Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|
| Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
| PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
| PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||
| PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
| Cured SU8 (260 C for 30 min) | Piranha (150mL H2SO4 + 50mL H2O2) | ~500nm/s (v. fast) | MAY 27, 2010 | Geza | Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | ||
| Titanium (sputtered) | BHF | PR | ~3.33nm/s (order of magnitude estimate) | JULY 5, 2010 | Geza | If you etch for >5min, cure PR at 115C for 15min prior to etch |
| Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|
| SiN | PECVD | |||||
| SiO2 | PECVD | |||||
| Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | Script | Deposit 180nm on blank Si sample, measure index and thickness, calculate required thickness from index (use Excel script), deposit dielectric on both facets (one at a time). Generally 180nm, n~2.15, purple color. |
