Cleanroom Reports

• List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
• Please update yours if you run any calibration so that everyone can keep track of them.
• Wet etch recipes:

http://www.cleanroom.byu.edu/wet_etch.phtml

http://terpconnect.umd.edu/~browns/wetetch.html

• Refractive indexes:

http://refractiveindex.info/

Dry Etch

Etched material	Equipment	Substrate	Recipe	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Si	ICP#2	SOI	Bowers si etch # 127	4nm/s	JUN 12, 2010	Jon Peters	ICP#2 si etch rate
SiO2	ICP#2	SOI	SiOxVert, recipe #101	~252nm/min	NOV 9, 2010;	Molly	Media:SiO2_Vert.pdf
SiN	ICP#2	SOI	SiOxVert, recipe #101	~300nm/min		Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	Bowers SiOxVert etch # 101	~111 nm/min	MAY 27, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W)	~275 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W + 40 sccm O2)	~465 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (300W + 40 sccm O2)	~690 nm/min	JUN 1, 2010	Geza		Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.

Wet Etch

Etched material	Solution	Mask	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Thermal oxide	BHF	PR or dielectric	~100nm/min
PECVD oxide	BHF	PR or dielectric	~225nm/min
PECVD SiN	BHF		~30-50nm/min		Jon P.
PECVD SiN	HF		~500nm/min		Geza		PR does not survive as a mask
Cured SU8 (260 C for 30 min)	Piranha (150mL H2SO4 + 50mL H2O2)		~500nm/s (v. fast)	MAY 27, 2010	Geza		Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
Titanium (sputtered)	BHF	PR	~3.33nm/s (order of magnitude estimate)	JULY 5, 2010	Geza		If you etch for >5min, cure PR at 115C for 15min prior to etch
Ta2O5	HF	no mask used	~100nm/s	JUNE 1, 2011	Geza		-

Dielectric Deposit

Material	Equipment	Latest deposit rate	Latest update date	Latest update by	Calib. file	Note
SiN	PECVD
SiO2	PECVD
Ta2O5	Ebeam #2	1A/sec		Hui-Wen		Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (), deposit dielectric on both facets (one at a time). Generally need 203nm, n~2.0, purple color.
SrF2	Ebeam #2	2-5A/sec		Jon P		Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.