Cleanroom Reports
From OptoelectronicsWiki
Revision as of 17:14, 28 May 2010 by 128.111.239.192 (Talk)
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
| Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|---|
| Si | ICP#2 | SOI | Bowers si etch # 127 | drop from 4nm/s to 3nm/s | APR 27, 2010 | Hui-Wen | ICP#2 si etch rate | |
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | Bowers SiOxVert etch # 101 | ~111 nm/min | MAY 27, 2010 | Geza |
| Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|
| Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
| PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
| PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||
| PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
| Cured SU8 (260 C for 30 min) | Piranha (150mL H2SO4 + 50mL H2O2) | ~1 um/s (v. fast) | MAY 27, 2010 | Geza | Piranha does not attack SiN or Gold, suspect heavy undercut |
| Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|
| SiN | PECVD | |||||
| SiO2 | PECVD | |||||
| Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | AR coating |
