Cleanroom Reports

• List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
• Please update yours if you run any calibration so that everyone can keep track of them.
• Wet etch recipes: http://www.cleanroom.byu.edu/wet_etch.phtml

http://terpconnect.umd.edu/~browns/wetetch.html

Dry Etch

Etched material	Equipment	Substrate	Recipe	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Si	ICP#2	SOI	Bowers si etch # 127	drop from 4nm/s to 3nm/s	APR 27, 2010	Hui-Wen	ICP#2 si etch rate
Cured SU8 (260 C for 30 min)	ICP#2	SOI	Bowers SiOxVert etch # 101	~111 nm/min	MAY 27, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W)	~275 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W + 40 sccm O2)	~465 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (300W + 40 sccm O2)	~690 nm/min	JUN 1, 2010	Geza		Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min

Wet Etch

Etched material	Solution	Mask	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Thermal oxide	BHF	PR or dielectric	~100nm/min
PECVD oxide	BHF	PR or dielectric	~225nm/min
PECVD SiN	BHF		~30-50nm/min		Jon P.
PECVD SiN	HF		~500nm/min		Geza		PR does not survive as a mask
Cured SU8 (260 C for 30 min)	Piranha (150mL H2SO4 + 50mL H2O2)		~1 um/s (v. fast)	MAY 27, 2010	Geza		Piranha does not attack SiN or Gold, suspect heavy undercut but have no data

Dielectric Deposit

Material	Equipment	Latest deposit rate	Latest update date	Latest update by	Calib. file	Note
SiN	PECVD
SiO2	PECVD
Ta2O5	Ebeam #2	1A/sec		Hui-Wen	Script	Deposit 180nm on blank Si sample, measure index and thickness, calculate required thickness from index (use Excel script). Generally 180nm, n~2.15, purple color.