Process Hybrid Silicon
From OptoelectronicsWiki
| Process ID | Version | Process flow | Process follower | Description |
|---|---|---|---|---|
| SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
| SP-VC | Si VC etch | Vertical channel etch | ||
| HSP-METCH | Mesa etch | Forms mesa | ||
| HSP-QW | III-V QW etch | Quantum well etch | ||
| HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
| HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
| HSP-METAL | thin metal | Thin metal deposition | ||
| HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
| Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
| Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal. Contains PR spin speeds and exposure times for Stepper (6300) | |
| Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
| Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
| Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske) |
