Process Hybrid Silicon

Single steps of hybrid silicon processes

Process ID	Version	Process flow	Process follower	Description
SP-PWD		Si WG etch‎	Si WG etch‎	Single etch-step SOI process; passive components
SP-VC			Si VC etch	Vertical channel etch
HSP-METCH			Mesa etch	Forms mesa
HSP-QW			III-V QW etch	Quantum well etch
HSP-NETCH			n-layer etch	Remove n-layer to expose Si
HSP-PTLM			p-TLM step	An additional process step is necessary to pattern p-TLM structures
HSP-METAL			thin metal	Thin metal deposition
HSP-PP			Probe pad deposition	Pattern and deposit probe metal
Wafer bonding			Bonding	Beginner's guide to plasma assisted wafer bonding
Wafer bonding II			direct wafer bonding	O2 plasma assisted wafer bonding (rev. 2008)
Non-planar wafer bonding			non-planar bonding	Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske)
TLM only			TLM only	Post-bond process for use with a TLM-only mask set

Full device run hybrid silicon processes

Process ID	Version	Process flow	Process follower	Description
PHASER	2	PHASER	PHASER	PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates
Epump 2		process flow	Epump 2	Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches.
Self-aligned rev. 2		process flow	self rev. 2	Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300)

Old versions of hybrid silicon processes

Process ID	Version	Process flow	Process follower	Description
PHASER	1		PHASER gen 1	PHASER (SOAs, thermal phase tuning pads, MMIs) process flow.
Epump 2		process flow	Epump 2	Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches.
Si WG etch	1		WG etch	ca. 2008 Si waveguide etch process
Si WG etch	2		WG etch	Si waveguide etch process with gratings, PR reflow, and vertical channels