Ph.D Theses

 

Utku Soylu (2023)
210 GHz .and 280 GHz transceiver ICs; 210 GHz transciever modules and links
Soylu_thesis.pdf

Logan Whitaker (2023)
High-frequency, self-aligned InGaAs-channel MOS-HEMTs
Whitaker_thesis.pdf

Yihao Fang (2021)
InP HBTs with regrown base layers.
yihao_fang_phd_thesis.pdf

Hsin-Ying Tseng (2021)
Triple-heterojunction tunnel field-effect transistors.
Hsin_Ying_dissertation.pdf

Ali Farid (2021)
140GHz CMOS ICs transceivers and 140GHz MIMO transceiver arrrays
Ali_Farid_Thesis.pdf

Brian Markman (2020)
InGaAs high-frequency MOS-HEMTs
Brian_Markman_Thesis.pdf

Ahmed Ahmed (2020)
High-efficiency 100-300GHz power amplifiers.
Ahmed_Ahmed_Thesis.pdf

Arda Simsek (2019)
mm-Wave transceivers and optical PLLs.
Arda_Simsek_Dissertation.pdf

Rob Maurer (2017)
Wideband mm-Wave transcevier design
Rob_Maurer_Dissertation.pdf

Johann Rode (2015)
1.06 THz InP heterojunction bipolar transistors
Rode_Dissertation.pdf

Prateek Choudhary (2015)
InP HBTs with MOCVD-regrown emitter-base junctions.
Choudhary_Thesis.pdf

Cheng-Ying Huang (2015)
High-performance III-V MOSFETs: double-heterojunction designs for low leakage, devices to 12nm Lg.
ChengYing_Thesis.pdf

Han-Wie Chiang (2014)
DC current gain in THz HBTs
HWChiang_Thesis.pdf

Eli Bloch (2014)
Co-supervised with Prof. Dan Ritter of the Technion
High speed ICs for optical phase locked loops
Eli Bloch_Thesis.pdf

Sanghoon Lee (2014)
III-V MOSFETs with record DC characteristics
Lee_Sanghoon_thesis.pdf

Hyunchul Park (2014)
ICs for optical phase locking. Optical phase locking and frequency synthesis. Series-connected mm-wave power amplifiers
Park_thesis.pdf

Andrew Daniel Carter (2013)
III-V MOSFETs, gate-first and gate-last, high-K gate dielectrics for III-V's.
adc_thesis.pdf

Thomas Reed (2013)
High-Power (up to 180mW) 220GHz power amplifiers
reed_Dissertation.pdf

Dennis Scott (2013)
InP HBTs with regrown emitter-base junctions
Dennis_Scott_thesis.pdf

Ashish Baraskar (2011)
Theory and experimental demonstration of ultra-low resistivity Ohmic contacts to III-V semiconductors
Baraskar_thesis.pdf

Vibhor Jain (2011)
InP HBT technology with refractory W/TiW emitter contact technologies. Fmax of c.a. 1THz.
Jain_thesis.pdf

Evan Lobisser (2011)
InP HBTs in a deep submicron technology. Very high current-gain cutoff frequencies
lobisser_dissertation_final.pdf

Colin Sheldon (2009)
Hardware and signal processing for line-of-sight mm-wave MIMO wireless communications.
sheldon_thesis.pdf

Uttam Singisetti (2009)
III-V MOSFETs
Singisetti_thesis.pdf

Navin Parthasarthay (2007, posthumous)
InP heterojuction bipolar transistors with Triple-implanted collector pedestal structures for reduced collector junction parasitic capacitance
parthasarathy_thesis.pdf

Munkyo Seo (2007)
Adapative and blind algorithms for correction of channel-channel imbalance errors in time-interleaved analog-digital converters.  Millimeter-wave imaging sensor networks.
M_Seo_thesis.pdf

Zach Griffith (2005):
150 GHz Static Frequency Dividers, Ultra high frequency Heterojunction Bipolar Transistors
griffith_thesis_2.0_10162005.PDF

Yinga Dong (2004):
Epitaxial growth and implantation techniques for Collector capacitance reduction in InP HBTs
Dong_thesis.pdf

Vamsi Paidi (2004)
Low-Distortion class B power amplifiers in Gallium Nitride, 140-220 GHz medium-power amplifiers in InP DHBT
Paidi_Thesis.pdf

Mattias Dahlstrom (2003)
Ultra High Speed InP Heterojunction Bipolar Transistors
MattiasThesis.pdf

Miguel Urteaga (2003)
Deep submicron InGaAs/InAlAs transferred-substrate heterojunction bipolar transistors. 140-220 GHz monolithic amplifiers. Dielectric sidewall processes for manufacturable InGaAs/InP double heterojunction bipolar transistors.
urteaga_Thesis.pdf

Yun Wei (2003)
Wide Bandwidth Power Heterojunction Bipolar Transistors and Amplifiers
wei_thesis.pdf

Sundararajan Krishnan (2002)
8 GHz clock rate oversampled Analog-digital converters, InP double heterojunction bipolar transistors
sundararajan_thesis.pdf

Thomas Mathew (2001)
High Speed HBT Digital ICs,
mathew_thesis.pdf

Shrinivasan Jaganathan (2000):
18-GHz-clock-rate delta-sigma oversampled ADCs in the transferred-substrate HBT process.
jaganathan_thesis.pdf

James Guthrie (2000):
HBTs on a copper-polymer substrate for aggressive wiring parasitic reduction, millimeter-wave amplifier ICs.
jamesthesis.pdf

Karthik Krishnamurthy (2000):
Broadband Power Amplifiers using Gallium Nitrite HEMTs
karthik's_thesis.pdf

Qinghung (Michelle) Lee (1999):
Submicron transferred-substrate HBTs with >800 GHz extrapolated fmax
lee_thesis.pdf

Dino Mensa (1999)
High-ft transferred-substrate HBTs
Dino_Thesis.pdf

Bipul Agarwal (1998)
Analog ICs in a transferred-substrate HBT technology
poles_thesis_2.pdf

Raja Pullela (1998)
Digital ICs in the transferred-substrate HBT technology,
rajas_thesis.pdf

Madhukar Reddy (1997)
InGaAs/AlAs Schottky-Collector Resonant Tunnel Diodes,
Monolithic Array Oscillators to 650 GHz
madhu_thesis.pdf

Uddalak Bhattacharya (1996):
Transferred-Substrate HBTs (1996) Bhattacharya_thesis.pdf

Kirk Giboney (1995):
Traveling Wave Photodetectors
giboney_dissertation.pdf

Scott Allen (1994):
Subpicosecond Electrical Pulse Generation and Sampling, Schottky Collector RTDs (1994) Allen_thesis.pdf

Ruai Yu (1994):
Active wafer probes for on-wafer DC-150GHz network analysis
Yu_Ruai_thesis.pdf

Michael Case (1993)
Nonlinear transmission lines for step and impulse generation (1993)
Case_thesis.pdf

Mark Rodwell (1998)
Nonlinear Transmission Lines (1988).  Obsolete, but some interesting Courant-style shock-wave math, and a detailed analysis as to why fully-distributed traveling-wave semiconductor devices are not a good idea.
rodwell_thesis.pdf