Difference between revisions of "Process Hybrid Silicon"

Revision as of 13:33, 3 October 2011

**Single steps of hybrid silicon processes**
Process ID	Process flow	Process follower	Description
SP-PWD	Si WG etch‎	Si WG etch‎	Single etch-step SOI process; passive components
SP-VC		Si VC etch	Vertical channel etch
HSP-METCH		Mesa etch	Forms mesa: see page for optimization efforts
HSP-QW		III-V QW etch	Quantum well etch
HSP-NETCH		n-layer etch	Remove n-layer to expose Si
HSP-PTLM		p-TLM step	An additional process step is necessary to pattern p-TLM structures
HSP-METAL		thin metal	Thin metal deposition
HSP-PP		Probe pad deposition	Pattern and deposit probe metal
Wafer bonding		Bonding	Beginner's guide to plasma assisted wafer bonding
Wafer bonding II		direct wafer bonding	O2 plasma assisted wafer bonding (rev. 2008)
Non-planar wafer bonding		non-planar bonding	Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis)
TLM only		TLM only	Post-bond process for use with a TLM-only mask set

**Full device run hybrid silicon processes**
Process ID	Version	Process flow	Process follower	Description
PHASER	2	PHASER	PHASER	PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates
Epump 2		process flow	Epump 2	Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches.
Self-aligned rev. 2		process flow	self rev. 2	Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300)

Check the Device Run page for more process followers, mask layout files, etc.

**Old versions of hybrid silicon processes**
Process ID	Version	Process flow	Process follower	Description
PHASER	1		PHASER gen 1	PHASER (SOAs, thermal phase tuning pads, MMIs) process flow.
Epump 2		process flow	Epump 2	Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches.
Si WG etch	1		WG etch	ca. 2008 Si waveguide etch process
Si WG etch	2		WG etch	Si waveguide etch process with gratings, PR reflow, and vertical channels

@@ Line 25: / Line 25: @@
 | Wafer bonding II || &nbsp; || &nbsp; || [[media:O2PlamsaDirectBond_DiLiang.doc | direct wafer bonding]] || O2 plasma assisted wafer bonding (rev. 2008)
 |-
-| Non-planar wafer bonding || &nbsp; || &nbsp; || [[media:Nonplanar_wafer_bonding_recipe.doc | non-planar bonding]] || Non-planar wafer bonding for bonding multiple epis to a single Si piece (Andy Chang, not Jon Geske)
+| Non-planar wafer bonding || &nbsp; || &nbsp; || [[media:Nonplanar_wafer_bonding_recipe.doc | non-planar bonding]] || Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis)
 |-
 | TLM only || &nbsp; || &nbsp; || [[media:TLM_Siddarth.doc | TLM only]] || Post-bond process for use with a TLM-only mask set