Difference between revisions of "CaseList"
From OptoelectronicsWiki
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| [[Quantum well intermixing]] || || || | | [[Quantum well intermixing]] || || || | ||
|- | |- | ||
| − | | [[Wafer bonding]] || | + | | [[Wafer bonding]] || Bubbles,Poor Bond, Edge Issues || || |
|- | |- | ||
| [[Gap fill]] || || || | | [[Gap fill]] || || || | ||
Revision as of 10:42, 3 November 2011
Process Issues and Defects
| Process Step | Issue or Defect | Link | |
|---|---|---|---|
| Initial wafer check | |||
| Dice and cleave | |||
| SOI waveguide | |||
| SOI grating | |||
| SOI actives | |||
| Vertical channel | |||
| Protection layer | |||
| Quantum well intermixing | |||
| Wafer bonding | Bubbles,Poor Bond, Edge Issues | ||
| Gap fill | |||
| P-mesa | |||
| Lower SCH | |||
| N-InP | |||
| N-metal | |||
| P-metal | |||
| Ion implantation | |||
| Via | |||
| Probe metal | |||
| Remove III/V in gap | |||
| Dice and polish |
