Difference between revisions of "Modulator"

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(Report)
(Design)
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== Design ==
 
== Design ==
  
   Epitaxy:
+
   Epitaxy: [[Media:report_0707231-2_110714.pdf|Specs of the 1250nm EPI]]
  
 
   Structure:
 
   Structure:

Revision as of 09:46, 1 April 2012

The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.

The first generation

Time: 2010


Process

Process flow:

 xls file: Media:EAM10_process.xls‎
 slides: Media:EAM10_process.pptx

Mask files:

 Media: EAM10_Mask.zip

Related Papers

The second generation

Time: 2011

Design

 Epitaxy: Specs of the 1250nm EPI
 Structure:

Process

 xls file: Media:EAM11_process.xls‎
 slides: TBU

Report

 Q1 report: Study of Integrated Hybrid Silicon Modulators

 Q1 slides: Comparison of different hybrid modulator design

Related Papers