Difference between revisions of "Modulator"
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= The first generation = | = The first generation = | ||
Time: 2010 | Time: 2010 | ||
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== Process == | == Process == |
Revision as of 09:50, 1 April 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
Process flow:
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask files:
Media: EAM10_Mask.zip
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy: Specs of the 1250nm EPI
Structure:
Process
xls file: Media:EAM11_process.xls
slides: TBU
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design