Difference between revisions of "Mesa Etching"
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E-Phi Dev2 SOA mesa definition process: | E-Phi Dev2 SOA mesa definition process: | ||
| − | [[media:Ephi_Mesa_Etching_v2.xlsx]] | + | [[media:Ephi_Mesa_Etching_v2.xlsx|Process follower]] |
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| + | [[media:III-V_mesa_etch_completed_on_SOA1.pptx|Process flow and SEM]] | ||
Processing completed as of July 7/1/12. See Mike with questions or issues. | Processing completed as of July 7/1/12. See Mike with questions or issues. | ||
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== Data == | == Data == | ||
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[[media:2011_Jun11_MesaSmooth.pptx|SEMs of mesa]] | [[media:2011_Jun11_MesaSmooth.pptx|SEMs of mesa]] | ||
As shown in the above SEMs, etching the SiN layer in ICP, results in smoother sidewalls after the InP etch (when compared to the standard process which uses RIE3). The next step is to compare the sidewalls of this optimized etch process to the InP etch from the Blumenthal and Coldren groups. | As shown in the above SEMs, etching the SiN layer in ICP, results in smoother sidewalls after the InP etch (when compared to the standard process which uses RIE3). The next step is to compare the sidewalls of this optimized etch process to the InP etch from the Blumenthal and Coldren groups. | ||
Latest revision as of 21:20, 12 July 2012
This page outlines our effort to improve the III-V mesa etch.
Processing[edit]
E-Phi Dev2 SOA mesa definition process:
Processing completed as of July 7/1/12. See Mike with questions or issues.
The mask file is identical to the mesa layer of the taper test mask.
Data[edit]
As shown in the above SEMs, etching the SiN layer in ICP, results in smoother sidewalls after the InP etch (when compared to the standard process which uses RIE3). The next step is to compare the sidewalls of this optimized etch process to the InP etch from the Blumenthal and Coldren groups.
