Difference between revisions of "DUV Stepper"
From OptoelectronicsWiki
Jaredhulme (Talk | contribs) (→Presentations) |
Jaredhulme (Talk | contribs) (→Presentations) |
||
(One intermediate revision by the same user not shown) | |||
Line 27: | Line 27: | ||
Liftoff process with positive/negative PR (HP's work): [[Media: 2012_09_28_DUV_Liftoff.pptx]] | Liftoff process with positive/negative PR (HP's work): [[Media: 2012_09_28_DUV_Liftoff.pptx]] | ||
− | + | Current Presentation: [[Media: DUV Stepper Waveguides_v8a.pptx]] | |
− | + | Backup Presentations: [[DUV Stepper Waveguides Backup Presentations]] | |
=== Pictures === | === Pictures === |
Latest revision as of 17:17, 12 November 2012
Contents
Characterization[edit]
Process Follower Google Doc
PR etch rate[edit]
PR | Equipment | Substrate | Recipe | PR etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|---|
UV210 | D-RIE | Si | BOV_J_01 | 28 nm/min | Nov 9, 2012 | Geza | - | Full 4" wafer covered in PR, ~1% Si exposed |
UV210 | ICP#2 | Si | #101: SiOxVert | 140 nm/min | Nov 5, 2012 | Geza | - | SiO2 etch rate: 200 nm/min (?) |
UV210 | ICP#2 | Si | #104: Nanoetch | 100 nm/min | Nov 5, 2012 | Geza | - | 5/35/5 sccm (O2/CHF3/CF4), 500/50 W, SiO2 etch rate: 100 nm/min |
UV6 | ICP#2 | Si | #101: SiOxVert | 135 nm/min | Nov 5, 2012 | Geza | - | - |
UV6 | ICP#2 | Si | #104: Nanoetch | 90 nm/min | Nov 5, 2012 | Geza | - | 5/35/5 sccm (O2/CHF3/CF4), 500/50 W, SiO2 etch rate: 100 nm/min |
UV6 | ICP#2 | Si | #104: Nanoetch | 145 nm/min | Nov 5, 2012 | Geza | - | 10/35/5 sccm (O2/CHF3/CF4), 500/50 W, SiO2 etch rate: ~80 nm/min |
Presentations[edit]
HP's development for 500 nm WGs, 200 nm coupler gaps (please don't share with people outside Bowers group): Media: 2012_09_11_DUV.pptx
Liftoff process with positive/negative PR (HP's work): Media: 2012_09_28_DUV_Liftoff.pptx
Current Presentation: Media: DUV Stepper Waveguides_v8a.pptx
Backup Presentations: DUV Stepper Waveguides Backup Presentations
Pictures[edit]
160C Bake[edit]
DUV Si 160C_0 SEMs - Gasonics x3 - Dies 26-29: File:160c 8 6 12.zip DUV Si 160C_0 Microscope Pics - After 20 min Nanostrip: File:Post 20min NanoStrip 8 10 12.zip
170C Bake[edit]
DUV Si 170C_0 SEMs - Gasonics x3 - Dies 24-27: File:170c 8 4 12.zip DUV Si 170C_1 SEMs - PE2 2' + 1165 30' + u/s 10' + PE2 2': File:DUV-si-170C-1.zip DUV Si 170C_2 Pic - Flood DUV pre-etch + AZ300MIF post-etch: Media:DUV_si_170C_2.jpg DUV Si 170C_1 SEMs - Sidewall profiles post clean: File:9 7 DUV SOI 170 1 Sidewalls.zip DUV SOI 170C_1 SEMs - 1165 30' + u/s 10' + PE2 2': File:8 28 DUV SOI 170C 1.zip DUV SOI 170C_1 SEMs - 1165 30' + u/s 10' + PE2 2': File:8 31 DUV SOI 170C 1.zip DUV SOI 170C_1 SEMs - ZigZag Grating: File:9 11duvzigzaggrating.zip
180C Bake[edit]
DUV Si 180C_0: SEMs - Gasonics x3 - Dies 19-28: File:180c 8 4 12.zip DUV Si 180C_0: SEMs - Gasonics x3 - Dies 25-29: File:180c 8 6 12.zip
Deep Etch[edit]
DUV Si 170C_1: Post Deep Etch SEMs - E25 F-.15: File:11 9 12 DUV SOI 1 DeepEtch.zip
Return to Cleanroom Equipment