Difference between revisions of "Process Hybrid Silicon"
From OptoelectronicsWiki
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| Wafer bonding II || || || [[media:O2PlamsaDirectBond_DiLiang.doc | direct wafer bonding]] || O2 plasma assisted wafer bonding (rev. 2008) | | Wafer bonding II || || || [[media:O2PlamsaDirectBond_DiLiang.doc | direct wafer bonding]] || O2 plasma assisted wafer bonding (rev. 2008) | ||
|- | |- | ||
− | | Non-planar wafer bonding || || || [[media:Nonplanar_wafer_bonding_recipe.doc | non-planar bonding]] || Non-planar wafer bonding for bonding multiple epis to a single Si piece ( | + | | Non-planar wafer bonding || || || [[media:Nonplanar_wafer_bonding_recipe.doc | non-planar bonding]] || Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis) |
|- | |- | ||
| TLM only || || || [[media:TLM_Siddarth.doc | TLM only]] || Post-bond process for use with a TLM-only mask set | | TLM only || || || [[media:TLM_Siddarth.doc | TLM only]] || Post-bond process for use with a TLM-only mask set |
Revision as of 13:33, 3 October 2011
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
SP-VC | Si VC etch | Vertical channel etch | ||
HSP-METCH | Mesa etch | Forms mesa: see page for optimization efforts | ||
HSP-QW | III-V QW etch | Quantum well etch | ||
HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
HSP-METAL | thin metal | Thin metal deposition | ||
HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis) | ||
TLM only | TLM only | Post-bond process for use with a TLM-only mask set |
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 2 | PHASER | PHASER | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) |
Check the Device Run page for more process followers, mask layout files, etc.
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 1 | PHASER gen 1 | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. | |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Si WG etch | 1 | WG etch | ca. 2008 Si waveguide etch process | |
Si WG etch | 2 | WG etch | Si waveguide etch process with gratings, PR reflow, and vertical channels |